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JPS5684478A - Apparatus for plasma treatment - Google Patents

Apparatus for plasma treatment

Info

Publication number
JPS5684478A
JPS5684478A JP16064979A JP16064979A JPS5684478A JP S5684478 A JPS5684478 A JP S5684478A JP 16064979 A JP16064979 A JP 16064979A JP 16064979 A JP16064979 A JP 16064979A JP S5684478 A JPS5684478 A JP S5684478A
Authority
JP
Japan
Prior art keywords
supporter
gas supply
supply device
plasma treatment
relation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16064979A
Other languages
Japanese (ja)
Other versions
JPS6053751B2 (en
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP16064979A priority Critical patent/JPS6053751B2/en
Publication of JPS5684478A publication Critical patent/JPS5684478A/en
Publication of JPS6053751B2 publication Critical patent/JPS6053751B2/en
Expired legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To equalize the plasma treatment and enhance a yield by a method wherein a substrate supporter and a gas supply device having many small gas supply pores arranged opposedly are mounted and above described small pores are set so as to differentiate a gas supply amount in relation to a position of the supporter.
CONSTITUTION: The substrate supporter 2 as one electrode and the gas supply device 3 as other electrode arranged facing the supporter 2 and havig many small pores 5' for supplying a gas are mounted in a container 1 and above described small pores 5' are set so as to differentiate a gas supply amount in relation to a position of the supporter 2 of the substrate 4 to constitute the apparatus. That is, this apparatus is characterized in that the distribution density and the dimension of many small pores formed to the supply device 3 are differentiated in relation to the position of the supply device 3 and the setting thereof is carried out by an experimentaly calculated result so as to carry out the uniform plasma treatment to each substrates 4A, 4B by a reaction gas.
COPYRIGHT: (C)1981,JPO&Japio
JP16064979A 1979-12-10 1979-12-10 plasma processing equipment Expired JPS6053751B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16064979A JPS6053751B2 (en) 1979-12-10 1979-12-10 plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16064979A JPS6053751B2 (en) 1979-12-10 1979-12-10 plasma processing equipment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5206880A Division JPS5683033A (en) 1980-04-18 1980-04-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5684478A true JPS5684478A (en) 1981-07-09
JPS6053751B2 JPS6053751B2 (en) 1985-11-27

Family

ID=15719491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16064979A Expired JPS6053751B2 (en) 1979-12-10 1979-12-10 plasma processing equipment

Country Status (1)

Country Link
JP (1) JPS6053751B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754324A (en) * 1980-09-10 1982-03-31 Ibm
JPS57131372A (en) * 1981-02-05 1982-08-14 Seiko Epson Corp Plasma etching device
JPS5837924A (en) * 1981-08-28 1983-03-05 Fujitsu Ltd plasma etching equipment
JPS5943880A (en) * 1982-09-03 1984-03-12 Matsushita Electric Ind Co Ltd Dry etching device
JPS59189238U (en) * 1983-05-31 1984-12-15 富士通株式会社 dry etching equipment
JPS6164128A (en) * 1984-09-05 1986-04-02 Toshiba Corp Treating device for sample
JPS61238981A (en) * 1985-04-16 1986-10-24 Ulvac Corp Method for making uniform high-frequency etching
JPH02198138A (en) * 1989-01-27 1990-08-06 Nec Corp Electrode plate of parallel plate type dry etching apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007145330A1 (en) 2006-06-15 2007-12-21 Daikin Industries, Ltd. Dust collector

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754324A (en) * 1980-09-10 1982-03-31 Ibm
JPH0359573B2 (en) * 1980-09-10 1991-09-11 Intaanashonaru Bijinesu Mashiinzu Corp
JPS57131372A (en) * 1981-02-05 1982-08-14 Seiko Epson Corp Plasma etching device
JPS5837924A (en) * 1981-08-28 1983-03-05 Fujitsu Ltd plasma etching equipment
JPH0159734B2 (en) * 1981-08-28 1989-12-19 Fujitsu Ltd
JPS5943880A (en) * 1982-09-03 1984-03-12 Matsushita Electric Ind Co Ltd Dry etching device
JPS6234834B2 (en) * 1982-09-03 1987-07-29 Matsushita Electric Ind Co Ltd
JPS59189238U (en) * 1983-05-31 1984-12-15 富士通株式会社 dry etching equipment
JPS6164128A (en) * 1984-09-05 1986-04-02 Toshiba Corp Treating device for sample
JPS61238981A (en) * 1985-04-16 1986-10-24 Ulvac Corp Method for making uniform high-frequency etching
JPS6366909B2 (en) * 1985-04-16 1988-12-22 Ulvac Corp
JPH02198138A (en) * 1989-01-27 1990-08-06 Nec Corp Electrode plate of parallel plate type dry etching apparatus

Also Published As

Publication number Publication date
JPS6053751B2 (en) 1985-11-27

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