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JPS5678117A - Furnace core tube - Google Patents

Furnace core tube

Info

Publication number
JPS5678117A
JPS5678117A JP15542079A JP15542079A JPS5678117A JP S5678117 A JPS5678117 A JP S5678117A JP 15542079 A JP15542079 A JP 15542079A JP 15542079 A JP15542079 A JP 15542079A JP S5678117 A JPS5678117 A JP S5678117A
Authority
JP
Japan
Prior art keywords
main body
tube
core tube
quartz glass
glass layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15542079A
Other languages
Japanese (ja)
Inventor
Masahiro Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15542079A priority Critical patent/JPS5678117A/en
Publication of JPS5678117A publication Critical patent/JPS5678117A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To eliminate the deformation of a furnace core tube against the use for a long period to make the life of the core tube to be semipermanent and to prevent the contamination from the tube of a material to be treated by a method wherein the inside and the outside surfaces of the silicon carbide tube main body to accommodate the member to be treated are covered with quartz glass layers having the prescribed thickness. CONSTITUTION:The furnace core tube 1 to be used for high temperature oxidation, impurity diffusion of the semiconductor wafer, etc., is constituted of the tube main body 2 consisting of silicon carbide and the quartz glass layers 3 applied or coated on the inside and the outside surfaces of the tube main body. The thickness of the quartz glass layers 3 is made to be 0.5mm. or more. By covering the inside and the outside surfaces of the tube main body 2 with the quartz glass layers 3, the deformation of the core tube 1 to be caused by the use for a long period is eliminated to make the life to be semipermanent and contamination of the material to be treated from the tube main body 2 is prevented.
JP15542079A 1979-11-30 1979-11-30 Furnace core tube Pending JPS5678117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15542079A JPS5678117A (en) 1979-11-30 1979-11-30 Furnace core tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15542079A JPS5678117A (en) 1979-11-30 1979-11-30 Furnace core tube

Publications (1)

Publication Number Publication Date
JPS5678117A true JPS5678117A (en) 1981-06-26

Family

ID=15605602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15542079A Pending JPS5678117A (en) 1979-11-30 1979-11-30 Furnace core tube

Country Status (1)

Country Link
JP (1) JPS5678117A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021520A (en) * 1983-07-18 1985-02-02 Toshiba Ceramics Co Ltd Carrying jig for semiconductor heat treatment
JPS62122212A (en) * 1985-11-22 1987-06-03 Toshiba Ceramics Co Ltd Jig for thermal treatment of semiconductor
JPH0238731U (en) * 1988-09-07 1990-03-15
JPH0686333U (en) * 1987-03-30 1994-12-13 ノートン カンパニー Diffusion furnace components
WO2010003035A1 (en) * 2008-07-02 2010-01-07 E. I. Du Pont De Nemours And Company Coated reactor tube, method of making the coated tube, method for making bismuth containing glass frit powders using aerosol decomposition in said reactor tube.
US20120231271A1 (en) * 2009-11-09 2012-09-13 Heraeus Quarzglas Gmbh & Co. Kg Process for producing a quartz glass cylinder and also support for carrying out the process

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021520A (en) * 1983-07-18 1985-02-02 Toshiba Ceramics Co Ltd Carrying jig for semiconductor heat treatment
JPS62122212A (en) * 1985-11-22 1987-06-03 Toshiba Ceramics Co Ltd Jig for thermal treatment of semiconductor
JPH0686333U (en) * 1987-03-30 1994-12-13 ノートン カンパニー Diffusion furnace components
JPH0238731U (en) * 1988-09-07 1990-03-15
WO2010003035A1 (en) * 2008-07-02 2010-01-07 E. I. Du Pont De Nemours And Company Coated reactor tube, method of making the coated tube, method for making bismuth containing glass frit powders using aerosol decomposition in said reactor tube.
CN102105412A (en) * 2008-07-02 2011-06-22 E.I.内穆尔杜邦公司 Coated reactor tube, method of making the coated tube, method for making bismuth containing glass frit powders using aerosol decomposition in said reactor tube.
JP2011526878A (en) * 2008-07-02 2011-10-20 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Method for producing glass frit powder using aerosol decomposition
US8790782B2 (en) 2008-07-02 2014-07-29 E I Du Pont De Nemours And Company Method for making glass frit powders using aerosol decomposition
CN104725077A (en) * 2008-07-02 2015-06-24 E.I.内穆尔杜邦公司 Coated reactor tube
US20120231271A1 (en) * 2009-11-09 2012-09-13 Heraeus Quarzglas Gmbh & Co. Kg Process for producing a quartz glass cylinder and also support for carrying out the process
US8783069B2 (en) * 2009-11-09 2014-07-22 Heraeus Quarzglas Gmbh & Co. Kg Process for producing a quartz glass cylinder and also support for carrying out the process

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