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JPS5671987A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5671987A
JPS5671987A JP14908379A JP14908379A JPS5671987A JP S5671987 A JPS5671987 A JP S5671987A JP 14908379 A JP14908379 A JP 14908379A JP 14908379 A JP14908379 A JP 14908379A JP S5671987 A JPS5671987 A JP S5671987A
Authority
JP
Japan
Prior art keywords
layer
area
activated
type
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14908379A
Other languages
Japanese (ja)
Inventor
Yoshito Ikuwa
Toshio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14908379A priority Critical patent/JPS5671987A/en
Publication of JPS5671987A publication Critical patent/JPS5671987A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To enable a high light output operation, to lower a threshold value current and to obtain a single mode oscillation by a method wherein an activated layer is enclosed from 4 directions to form an activated area.
CONSTITUTION: A clad layer N type GaAlAs layer 12, an activated layer N type GaAs layer 13 and a clad layer N type GaAlAs layer 14 are formed on a semiinsulating GaAs substrate 11. And further, in layers 12∼14, P type impurity diffusion areas 15, 16 which have a diffusion front of vertical direction within the layer 12 are formed in separating from each other. And a P electrode 22 is formed at a given position on the area 15 surface and an N electrode 23 is formed at a given positon including the surface of the layer 14 surrounded by the areas 15, 16. With a semiconductor laser having such a constitution like this, a hall current due to a laser illumination injected from the area 15 into the layer 13 can not flow into the N type area ahead hence, because the area 16 exists on the way. On this account, a width in the horizontal direction of a laser illuminating activated area 21 becomes small, and a threshold value current lowers, thus, a single mode oscillation being obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP14908379A 1979-11-15 1979-11-15 Semiconductor laser Pending JPS5671987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14908379A JPS5671987A (en) 1979-11-15 1979-11-15 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14908379A JPS5671987A (en) 1979-11-15 1979-11-15 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5671987A true JPS5671987A (en) 1981-06-15

Family

ID=15467317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14908379A Pending JPS5671987A (en) 1979-11-15 1979-11-15 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5671987A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003358A (en) * 1987-08-05 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device disposed in an insulating substrate
US5194399A (en) * 1987-08-05 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003358A (en) * 1987-08-05 1991-03-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor light emitting device disposed in an insulating substrate
US5100833A (en) * 1987-08-05 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5194399A (en) * 1987-08-05 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate

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