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JPS5661124A - Forming method of thin film on substrate having stepped part - Google Patents

Forming method of thin film on substrate having stepped part

Info

Publication number
JPS5661124A
JPS5661124A JP13913579A JP13913579A JPS5661124A JP S5661124 A JPS5661124 A JP S5661124A JP 13913579 A JP13913579 A JP 13913579A JP 13913579 A JP13913579 A JP 13913579A JP S5661124 A JPS5661124 A JP S5661124A
Authority
JP
Japan
Prior art keywords
film
thin film
substrate
stepped part
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13913579A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Wataru Wakamiya
Shinichi Sato
Hirokazu Miyoshi
Natsuo Tsubouchi
Hiroji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13913579A priority Critical patent/JPS5661124A/en
Publication of JPS5661124A publication Critical patent/JPS5661124A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To obtain a uniform film thickness on the approximately flat surface by overlapping thin films with the mask used for forming the stepped part being remained, removing the mask and the thin film thereon, and adding the thin film again. CONSTITUTION:CVD SiO2 films 6 and 7 are overlapped without removing a resistmask 5 used for etching a poly Si layer 2 on an Si substrate 1. Then, the mask 5 and the film 6 are selectively removed, and a CVD SiO2 film 8 is additionally formed again, thereby the surface is approximately flattened. A resist 9 is rotationally applied thereon. In this method, the difference in the film thickness is not yielded even though the thickness is thin, and the uniform pattern can be formed.
JP13913579A 1979-10-25 1979-10-25 Forming method of thin film on substrate having stepped part Pending JPS5661124A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13913579A JPS5661124A (en) 1979-10-25 1979-10-25 Forming method of thin film on substrate having stepped part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13913579A JPS5661124A (en) 1979-10-25 1979-10-25 Forming method of thin film on substrate having stepped part

Publications (1)

Publication Number Publication Date
JPS5661124A true JPS5661124A (en) 1981-05-26

Family

ID=15238343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13913579A Pending JPS5661124A (en) 1979-10-25 1979-10-25 Forming method of thin film on substrate having stepped part

Country Status (1)

Country Link
JP (1) JPS5661124A (en)

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