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JPS5649581A - Preparation of hetero-junction light detector - Google Patents

Preparation of hetero-junction light detector

Info

Publication number
JPS5649581A
JPS5649581A JP12497579A JP12497579A JPS5649581A JP S5649581 A JPS5649581 A JP S5649581A JP 12497579 A JP12497579 A JP 12497579A JP 12497579 A JP12497579 A JP 12497579A JP S5649581 A JPS5649581 A JP S5649581A
Authority
JP
Japan
Prior art keywords
layer
junction
hill
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12497579A
Other languages
English (en)
Other versions
JPS6244710B2 (ja
Inventor
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12497579A priority Critical patent/JPS5649581A/ja
Publication of JPS5649581A publication Critical patent/JPS5649581A/ja
Publication of JPS6244710B2 publication Critical patent/JPS6244710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP12497579A 1979-09-28 1979-09-28 Preparation of hetero-junction light detector Granted JPS5649581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12497579A JPS5649581A (en) 1979-09-28 1979-09-28 Preparation of hetero-junction light detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12497579A JPS5649581A (en) 1979-09-28 1979-09-28 Preparation of hetero-junction light detector

Publications (2)

Publication Number Publication Date
JPS5649581A true JPS5649581A (en) 1981-05-06
JPS6244710B2 JPS6244710B2 (ja) 1987-09-22

Family

ID=14898839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12497579A Granted JPS5649581A (en) 1979-09-28 1979-09-28 Preparation of hetero-junction light detector

Country Status (1)

Country Link
JP (1) JPS5649581A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4840916A (en) * 1984-05-31 1989-06-20 Fujitsu Limited Process for fabricating an avalanche photodiode
US4910154A (en) * 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4840916A (en) * 1984-05-31 1989-06-20 Fujitsu Limited Process for fabricating an avalanche photodiode
US4910154A (en) * 1988-12-23 1990-03-20 Ford Aerospace Corporation Manufacture of monolithic infrared focal plane arrays

Also Published As

Publication number Publication date
JPS6244710B2 (ja) 1987-09-22

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