[go: up one dir, main page]

JPS5642385A - Hetero-structure semiconductor device - Google Patents

Hetero-structure semiconductor device

Info

Publication number
JPS5642385A
JPS5642385A JP11689579A JP11689579A JPS5642385A JP S5642385 A JPS5642385 A JP S5642385A JP 11689579 A JP11689579 A JP 11689579A JP 11689579 A JP11689579 A JP 11689579A JP S5642385 A JPS5642385 A JP S5642385A
Authority
JP
Japan
Prior art keywords
region
layer
type
conductivity type
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11689579A
Other languages
Japanese (ja)
Other versions
JPS6244709B2 (en
Inventor
Yoshinari Matsumoto
Kenshin Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11689579A priority Critical patent/JPS5642385A/en
Publication of JPS5642385A publication Critical patent/JPS5642385A/en
Publication of JPS6244709B2 publication Critical patent/JPS6244709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a photodetector stable in operation by forming one conductivity type layer having a wide forbidden band width as compared with one conductivity type semiconductor substrate thereon, and forming a reverse conductivity type region formed thereon as a P-N junction of a concentrical region deep in a shallow cylindrical post region when forming the reverse conductivity type region. CONSTITUTION:N<+> type InP layer 12, N<-> type InGaAsP layer 13 and N<-> type InP layer 14 are laminated and epitaxially grown on an N<+> type InP substrate 11. Then, a circular mask 151 made of SiO2 or Si3N4 is formed on the peripheral edge of the surface of the uppermost layer 14, Cd or Zn is diffused in the layer 14, a shallow cylindrical post-shaped p guard ring region 21 is formed in the layer 14, and first P-N junction 22 is formed between the region 21 and the layer 14. Thereafter, the same impurity is diffused in the region 21, and a deeper concentrical avalanche amplification p type region 23 is formed than the region 21, and a second P-N junction 24 is formed between the region 23 and the layer 14. Thus, the region 23 is formed deeply, a depletion layer allows to reach the hetero boundary 18 at the time of breakdown as a high speed and high sensitivity photodiode.
JP11689579A 1979-09-12 1979-09-12 Hetero-structure semiconductor device Granted JPS5642385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11689579A JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11689579A JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642385A true JPS5642385A (en) 1981-04-20
JPS6244709B2 JPS6244709B2 (en) 1987-09-22

Family

ID=14698287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11689579A Granted JPS5642385A (en) 1979-09-12 1979-09-12 Hetero-structure semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642385A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198667A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPS5830164A (en) * 1981-08-17 1983-02-22 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode and manufacture thereof
JPS5854685A (en) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode and manufacture thereof
JPS5856364A (en) * 1981-09-08 1983-04-04 ア−・エヌ・テ−・ナッハリヒテンテヒニ−ク・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Input stage for photoreceiver formed as monolithic
JPS5892283A (en) * 1981-11-27 1983-06-01 Fujitsu Ltd Manufacturing method of semiconductor photodetector
JPS60198786A (en) * 1984-03-22 1985-10-08 Nec Corp Semiconductor photo receiving element
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector
JPH06281783A (en) * 1993-06-29 1994-10-07 Babcock Hitachi Kk Boiling water type reactor pressure vessel

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01150107U (en) * 1988-04-04 1989-10-17

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198667A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Light receiving element
JPH0157509B2 (en) * 1981-06-01 1989-12-06 Fujitsu Ltd
JPS5830164A (en) * 1981-08-17 1983-02-22 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode and manufacture thereof
JPS5856364A (en) * 1981-09-08 1983-04-04 ア−・エヌ・テ−・ナッハリヒテンテヒニ−ク・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング Input stage for photoreceiver formed as monolithic
JPS5854685A (en) * 1981-09-28 1983-03-31 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode and manufacture thereof
US4761383A (en) * 1981-09-28 1988-08-02 Kokusai Denshin Denwa Kabushiki Kaisha Method of manufacturing avalanche photo diode
JPS5892283A (en) * 1981-11-27 1983-06-01 Fujitsu Ltd Manufacturing method of semiconductor photodetector
JPS60198786A (en) * 1984-03-22 1985-10-08 Nec Corp Semiconductor photo receiving element
US4992386A (en) * 1988-12-14 1991-02-12 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor light detector
JPH06281783A (en) * 1993-06-29 1994-10-07 Babcock Hitachi Kk Boiling water type reactor pressure vessel

Also Published As

Publication number Publication date
JPS6244709B2 (en) 1987-09-22

Similar Documents

Publication Publication Date Title
ES360557A1 (en) A PHOTO DETECTING DEVICE.
KR850008558A (en) Manufacturing method of avalanche photoelectric diode and avalanche photoelectric diode
JPS5691478A (en) Manufacture of punch-through type diode
GB1231493A (en)
JPS5642385A (en) Hetero-structure semiconductor device
JPS5513907A (en) Avalnche photo diode with semiconductor hetero construction
CA2873841C (en) Planar avalanche photodiode
JPS5572084A (en) Semiconductor photo-detector
GB1154049A (en) Improvements in or relating to Avalanche Diodes.
JPS5572083A (en) Semiconductor photo-detector
JPS5658286A (en) Forming method for guard ring of avalanche photodiode
JPS54141596A (en) Semiconductor device
KR970054557A (en) Ultrafast Avalanche Photodiode and Manufacturing Method
JPS54110792A (en) Avalanche photo diode
JPS5726486A (en) Manufacture of semiconductor device
JPS5561078A (en) Manufacture of guard ring-fitted photodiode
JPS5513990A (en) Semiconductor device
GB1441261A (en) Semiconductor avalanche photodiodes
JPS57111073A (en) Semiconductor light-receiving element
JPS5623774A (en) Semiconductor device and its manufacture
JPH0258791B2 (en)
JPS57159072A (en) Manufacture of avalanche photodiode
JPS5646569A (en) Semiconductor device
JPS55125684A (en) Semiconductor photodetector element
JPS5596671A (en) Semiconductor device