JPS5648725A - Mosfet circuit - Google Patents
Mosfet circuitInfo
- Publication number
- JPS5648725A JPS5648725A JP12609379A JP12609379A JPS5648725A JP S5648725 A JPS5648725 A JP S5648725A JP 12609379 A JP12609379 A JP 12609379A JP 12609379 A JP12609379 A JP 12609379A JP S5648725 A JPS5648725 A JP S5648725A
- Authority
- JP
- Japan
- Prior art keywords
- fets
- potential
- mos
- turn
- point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To obtain an MOSFET circuit whose power consumption is low while its decision time is short, by giving a difference between an output-level transition voltage when an input changes from the low voltage side to the high voltage side and an output level when it changes reversely. CONSTITUTION:When input potential VIN is at high voltage side H, P-MOS.FETs 502 and 504 and N-MOS.FETs 506, 507, and 510 turn on, and P-MOS.FETs 501, 503 and 505 and N-MOS.FETs 508 and 509 turn off. When VIN changes from H to low voltage side L, FETs 501 and 503 turn on. At this time, FET502 is in the on- state and FET508 is in the off-state, the total impedance of side P is small even if FETs 501 and 503 turn on slightly, so that the potential of point D will rise to H rapidly. Next, when point D is at H, the potential of point E is to rise to H with a certain time lag and while FET502 is turned off, FET508 is turned off. On the other hand, the potential of VIN has neared L very much and the potential of point D stays at H.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12609379A JPS5648725A (en) | 1979-09-28 | 1979-09-28 | Mosfet circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12609379A JPS5648725A (en) | 1979-09-28 | 1979-09-28 | Mosfet circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5648725A true JPS5648725A (en) | 1981-05-02 |
Family
ID=14926425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12609379A Pending JPS5648725A (en) | 1979-09-28 | 1979-09-28 | Mosfet circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5648725A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59115615A (en) * | 1982-12-22 | 1984-07-04 | Fujitsu Ltd | semiconductor circuit |
EP0125733A1 (en) * | 1983-05-13 | 1984-11-21 | Koninklijke Philips Electronics N.V. | Complementary IGFET circuit arrangement |
EP0177338A2 (en) * | 1984-10-02 | 1986-04-09 | Fujitsu Limited | Logical gate circuit |
JPS62200816A (en) * | 1986-02-27 | 1987-09-04 | Nec Corp | Level shifter circuit |
JPH0296426A (en) * | 1988-09-30 | 1990-04-09 | Matsushita Electric Ind Co Ltd | Output circuit device |
JPH0358621A (en) * | 1989-07-27 | 1991-03-13 | Matsushita Electric Ind Co Ltd | Input buffer circuit |
JPH0358622A (en) * | 1989-07-27 | 1991-03-13 | Matsushita Electric Ind Co Ltd | Input buffer circuit |
JPH0456513A (en) * | 1990-06-26 | 1992-02-24 | Matsushita Electric Ind Co Ltd | Logic circuit |
-
1979
- 1979-09-28 JP JP12609379A patent/JPS5648725A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59115615A (en) * | 1982-12-22 | 1984-07-04 | Fujitsu Ltd | semiconductor circuit |
JPH0254693B2 (en) * | 1982-12-22 | 1990-11-22 | Fujitsu Ltd | |
EP0125733A1 (en) * | 1983-05-13 | 1984-11-21 | Koninklijke Philips Electronics N.V. | Complementary IGFET circuit arrangement |
EP0177338A2 (en) * | 1984-10-02 | 1986-04-09 | Fujitsu Limited | Logical gate circuit |
JPS62200816A (en) * | 1986-02-27 | 1987-09-04 | Nec Corp | Level shifter circuit |
JPH0296426A (en) * | 1988-09-30 | 1990-04-09 | Matsushita Electric Ind Co Ltd | Output circuit device |
JP2548333B2 (en) * | 1988-09-30 | 1996-10-30 | 松下電器産業株式会社 | Output circuit device |
JPH0358621A (en) * | 1989-07-27 | 1991-03-13 | Matsushita Electric Ind Co Ltd | Input buffer circuit |
JPH0358622A (en) * | 1989-07-27 | 1991-03-13 | Matsushita Electric Ind Co Ltd | Input buffer circuit |
JPH0456513A (en) * | 1990-06-26 | 1992-02-24 | Matsushita Electric Ind Co Ltd | Logic circuit |
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