JPS5646571A - Manufacture of solid image pickup element - Google Patents
Manufacture of solid image pickup elementInfo
- Publication number
- JPS5646571A JPS5646571A JP12355279A JP12355279A JPS5646571A JP S5646571 A JPS5646571 A JP S5646571A JP 12355279 A JP12355279 A JP 12355279A JP 12355279 A JP12355279 A JP 12355279A JP S5646571 A JPS5646571 A JP S5646571A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- film
- type
- overflow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54123552A JPS6031111B2 (ja) | 1979-09-26 | 1979-09-26 | 固体撮像素子の製法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54123552A JPS6031111B2 (ja) | 1979-09-26 | 1979-09-26 | 固体撮像素子の製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5646571A true JPS5646571A (en) | 1981-04-27 |
JPS6031111B2 JPS6031111B2 (ja) | 1985-07-20 |
Family
ID=14863419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54123552A Expired JPS6031111B2 (ja) | 1979-09-26 | 1979-09-26 | 固体撮像素子の製法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6031111B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190353A (en) * | 1981-05-19 | 1982-11-22 | Fujitsu Ltd | Manufacture of solid-state image pick-up device |
KR100239460B1 (ko) * | 1992-02-15 | 2000-01-15 | 김영환 | 고체 촬상장치의 제조방법 |
-
1979
- 1979-09-26 JP JP54123552A patent/JPS6031111B2/ja not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190353A (en) * | 1981-05-19 | 1982-11-22 | Fujitsu Ltd | Manufacture of solid-state image pick-up device |
JPH0522395B2 (ja) * | 1981-05-19 | 1993-03-29 | Fujitsu Ltd | |
KR100239460B1 (ko) * | 1992-02-15 | 2000-01-15 | 김영환 | 고체 촬상장치의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
JPS6031111B2 (ja) | 1985-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4670090A (en) | Method for producing a field effect transistor | |
JPS5673473A (en) | Manufacture of semiconductor element | |
JPS5735341A (en) | Method of seperating elements of semiconductor device | |
JPS5646571A (en) | Manufacture of solid image pickup element | |
JPS56124270A (en) | Manufacture of semiconductor device | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS5538019A (en) | Manufacturing of semiconductor device | |
JPS56103443A (en) | Production of element isolation structure for semiconductor device | |
JPS5649577A (en) | Preparation of solid image pickup element | |
JPH077157A (ja) | 薄膜トランジスタの製造方法 | |
JPS5591827A (en) | Production of semiconductor device | |
JPS5715477A (en) | Manufacture of solid state image pickup element | |
JPS5780733A (en) | Manufacture of semiconductor device | |
JPS562783A (en) | Production of solid state image pickup device | |
JPS56126957A (en) | Manufacture of semiconductor device | |
JPS57204160A (en) | Manufacture of semiconductor device | |
JPS577154A (en) | Preparation of semiconductor device | |
JPS5679446A (en) | Production of semiconductor device | |
JPS5780735A (en) | Manufacture of semiconductor device | |
JPS56147447A (en) | Manufacture of mosic | |
JPS57180176A (en) | Manufacturing method for semiconductor device | |
JPS5762566A (en) | Manufacture of semiconductor device | |
JPS57128067A (en) | Manufacture of semiconductor device | |
JPS5649573A (en) | Semiconductor device | |
JPS56161673A (en) | Semiconductor device and manufacture thereof |