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JPS5629328A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5629328A
JPS5629328A JP10403279A JP10403279A JPS5629328A JP S5629328 A JPS5629328 A JP S5629328A JP 10403279 A JP10403279 A JP 10403279A JP 10403279 A JP10403279 A JP 10403279A JP S5629328 A JPS5629328 A JP S5629328A
Authority
JP
Japan
Prior art keywords
gas
ccl4
etching
cathode
delay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10403279A
Other languages
Japanese (ja)
Inventor
Takashi Yamazaki
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10403279A priority Critical patent/JPS5629328A/en
Priority to DE3030814A priority patent/DE3030814C2/en
Priority to US06/177,910 priority patent/US4341593A/en
Priority to FR8018069A priority patent/FR2463976A1/en
Priority to GB8026885A priority patent/GB2059879B/en
Publication of JPS5629328A publication Critical patent/JPS5629328A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To accelerate the delay of an etching starting time by adding Cl2 gas to CCl4 gas used for etching when etching a film containing Al. CONSTITUTION:An aluminum film-accumulated wafer 9 is placed on a cathode 4 in a vacuum container 1, the container 1 is evacuated by evacuating means 13, CCl4 and Cl2 gases are introduced from inlets 2, 3, and the pressures are regulated by a conductance valve 14. When high frequency electric power is applied from a high frequency power source 7 to the cathode, gas plasma is generated between the cathode 4 and an anode 5 to start etching. When only the CCl4 gas is used to etch the Al in this case, there occurs a delay of several minutes - several ten order minutes until the etching starts. When Cl2 gas is mixed with the CCl4 gas, the time delay is largely accelerated, and this time delay may be reduced to zero by suitably selecting the pressure of the CCl4+Cl2 gases.
JP10403279A 1979-08-17 1979-08-17 Plasma etching method Pending JPS5629328A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10403279A JPS5629328A (en) 1979-08-17 1979-08-17 Plasma etching method
DE3030814A DE3030814C2 (en) 1979-08-17 1980-08-14 Process for plasma etching a workpiece
US06/177,910 US4341593A (en) 1979-08-17 1980-08-14 Plasma etching method for aluminum-based films
FR8018069A FR2463976A1 (en) 1979-08-17 1980-08-18 PLASMA ETCHING PROCESS FOR ALUMINUM FILMS
GB8026885A GB2059879B (en) 1979-08-17 1980-08-18 Plasma etching method for aluminumbased films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10403279A JPS5629328A (en) 1979-08-17 1979-08-17 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5629328A true JPS5629328A (en) 1981-03-24

Family

ID=14369888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10403279A Pending JPS5629328A (en) 1979-08-17 1979-08-17 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5629328A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143530A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of compound semiconductor device
JPS63288021A (en) * 1986-10-17 1988-11-25 Hitachi Ltd Method and device for plasma processing
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor
JPH03273627A (en) * 1990-03-23 1991-12-04 Matsushita Electron Corp Plasma etching apparatus for aluminum alloy film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141741A (en) * 1975-05-22 1976-12-06 Ibm Method of selectively removing aluminum

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141741A (en) * 1975-05-22 1976-12-06 Ibm Method of selectively removing aluminum

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143530A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of compound semiconductor device
JPH0214773B2 (en) * 1982-02-22 1990-04-10 Tokyo Shibaura Electric Co
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor
JPS63288021A (en) * 1986-10-17 1988-11-25 Hitachi Ltd Method and device for plasma processing
JPH03273627A (en) * 1990-03-23 1991-12-04 Matsushita Electron Corp Plasma etching apparatus for aluminum alloy film

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