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JPS562546A - Gas sensor using fet and its manufacture - Google Patents

Gas sensor using fet and its manufacture

Info

Publication number
JPS562546A
JPS562546A JP7846779A JP7846779A JPS562546A JP S562546 A JPS562546 A JP S562546A JP 7846779 A JP7846779 A JP 7846779A JP 7846779 A JP7846779 A JP 7846779A JP S562546 A JPS562546 A JP S562546A
Authority
JP
Japan
Prior art keywords
electrode
gate part
fet
polymer
covering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7846779A
Other languages
Japanese (ja)
Other versions
JPS6248188B2 (en
Inventor
Makoto Yano
Kiyoo Shimada
Kyoichiro Shibatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kuraray Co Ltd
Original Assignee
Kuraray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Co Ltd filed Critical Kuraray Co Ltd
Priority to JP7846779A priority Critical patent/JPS562546A/en
Publication of JPS562546A publication Critical patent/JPS562546A/en
Publication of JPS6248188B2 publication Critical patent/JPS6248188B2/ja
Granted legal-status Critical Current

Links

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To make a gas sensor thin enough to insert it into even a blood vessel, etc., by covering the gate part of pH sensitive FET and part of a comparison electrode adjoining to the gate part with a hydrophilic polymer and further by covering the polymer layer with a gas permeable polymer.
CONSTITUTION: The tip of a silicon wafer worked in a comb tooth shape is surface- nitrified to form gate part 2 and at the other end, electrode part 3 is also formed to obtain FET5. At an internal of distance l of 2mm or less from gate part 2, comparison electrode 4 is formed by dipping FET in a solution, containing Cl2, after silver is vapor-deposited. Next, electrode part 3 and comparison electrode 4 are fitted with conductor 8 and sensor 5 is inserted into catheter 6 and fixed by electric insulating resin 7. Next, hydrophilic polymer layer 9 that contains an electrolyte is formed while the whole surface of gate part 2 and part of electrode 4 are covered with a polymer such as PVA. Then, gas permeable layer 10 of silicon resin, etc., is provided covering polymer layer 9. Thus, it is made relatively easy to obtain a miniature gas sensor.
COPYRIGHT: (C)1981,JPO&Japio
JP7846779A 1979-06-20 1979-06-20 Gas sensor using fet and its manufacture Granted JPS562546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7846779A JPS562546A (en) 1979-06-20 1979-06-20 Gas sensor using fet and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7846779A JPS562546A (en) 1979-06-20 1979-06-20 Gas sensor using fet and its manufacture

Publications (2)

Publication Number Publication Date
JPS562546A true JPS562546A (en) 1981-01-12
JPS6248188B2 JPS6248188B2 (en) 1987-10-13

Family

ID=13662816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7846779A Granted JPS562546A (en) 1979-06-20 1979-06-20 Gas sensor using fet and its manufacture

Country Status (1)

Country Link
JP (1) JPS562546A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740641A (en) * 1980-08-25 1982-03-06 Kuraray Co Ltd Gas sensor
JPS59131156A (en) * 1983-01-17 1984-07-27 Kuraray Co Ltd Gas sensor
JPS59225341A (en) * 1983-05-13 1984-12-18 アンセツト・ラボラトリ−ズ・コ−ポレイシヨン Detector for blood gas
US4882292A (en) * 1986-09-05 1989-11-21 Stichting Centrum Voor Micro-Elektronics Twente Process for manufacturing a REFET or a CHEMFET, and the manufactured REFET or CHEMFET
US6819216B2 (en) 2002-04-19 2004-11-16 Matsushita Electric Industrial Co., Ltd. Thermostat

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53149396A (en) * 1977-06-01 1978-12-26 Kuraray Co Gas sensor
EP0002343A1 (en) * 1977-12-02 1979-06-13 AIRCO, Inc. A chemical-sensitive field-effect transistor, method of manufacture, and use in a probe and an instrument

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53149396A (en) * 1977-06-01 1978-12-26 Kuraray Co Gas sensor
EP0002343A1 (en) * 1977-12-02 1979-06-13 AIRCO, Inc. A chemical-sensitive field-effect transistor, method of manufacture, and use in a probe and an instrument

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740641A (en) * 1980-08-25 1982-03-06 Kuraray Co Ltd Gas sensor
JPH0222340B2 (en) * 1980-08-25 1990-05-18 Kuraray Co
JPS59131156A (en) * 1983-01-17 1984-07-27 Kuraray Co Ltd Gas sensor
JPH0365491B2 (en) * 1983-01-17 1991-10-14
JPS59225341A (en) * 1983-05-13 1984-12-18 アンセツト・ラボラトリ−ズ・コ−ポレイシヨン Detector for blood gas
JPH0479537B2 (en) * 1983-05-13 1992-12-16 Ansetsuto Lab Corp
US4882292A (en) * 1986-09-05 1989-11-21 Stichting Centrum Voor Micro-Elektronics Twente Process for manufacturing a REFET or a CHEMFET, and the manufactured REFET or CHEMFET
US6819216B2 (en) 2002-04-19 2004-11-16 Matsushita Electric Industrial Co., Ltd. Thermostat

Also Published As

Publication number Publication date
JPS6248188B2 (en) 1987-10-13

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