JPS5614148A - Semiconductor ion selective electrode - Google Patents
Semiconductor ion selective electrodeInfo
- Publication number
- JPS5614148A JPS5614148A JP9052779A JP9052779A JPS5614148A JP S5614148 A JPS5614148 A JP S5614148A JP 9052779 A JP9052779 A JP 9052779A JP 9052779 A JP9052779 A JP 9052779A JP S5614148 A JPS5614148 A JP S5614148A
- Authority
- JP
- Japan
- Prior art keywords
- film
- vapor
- resistance
- electrodes
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000005354 aluminosilicate glass Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
PURPOSE: To obtain a miniature, hard and easy-to-handle electrode by forming a resistance film with a proper temperature coefficient on a semiconductor and by providing both indication and comparison electrodes and a temperature compensating resistance to one semiconductor chip.
CONSTITUTION: On (p) type silicon single-crystal chip 1, (n) type common drain 2 and sources 3 and 4 are formed to constitute two FETs. The entire surface of chip 1 is covered with insulating film 5 of SiO2 by oxidizing. After surface film 5 is removed at (n) type parts 2W4, electrodes 2'W4' are formed by vapor deposition to form channel parts C1 and C2. On left SiO2 film 5 next to source 4, copper is vapor- deposited in a belt shape to form temperature compensating resistance 8 with a positive temperature coefficient and after film 5 on source 4 is removed, silver is vapor-deposited to form lead 9. Next, Si3N4 film 6 is formed on the entire film 5. Film 6 at part C2 is made into an ion selective sensing film and on film 6 on part C1, coating 7 without ion sensitive property is formed by vapor-depositing aluminosilicate glass. Lastly, lead wires are welded to one-side terminals of electrodes 2' and 3' and resistance 8 and after parts C1 and C2 are exposed, the entire surface is sealed with insulating coating 10 to complete the element.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9052779A JPS5614148A (en) | 1979-07-16 | 1979-07-16 | Semiconductor ion selective electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9052779A JPS5614148A (en) | 1979-07-16 | 1979-07-16 | Semiconductor ion selective electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5614148A true JPS5614148A (en) | 1981-02-10 |
Family
ID=14000891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9052779A Pending JPS5614148A (en) | 1979-07-16 | 1979-07-16 | Semiconductor ion selective electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5614148A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197456A (en) * | 1981-05-29 | 1982-12-03 | Toshiba Corp | Metallic ion detector |
| JPS5923864A (en) * | 1982-07-28 | 1984-02-07 | Toyota Motor Corp | sliding member |
| US4593225A (en) * | 1984-08-31 | 1986-06-03 | Zenith Electronics Corporation | Tension mask colar cathode ray tube |
| WO2009045090A3 (en) * | 2007-10-05 | 2009-06-04 | Mimos Berhad | Integrated thermally compensated ph egfet-flow rate sensor |
-
1979
- 1979-07-16 JP JP9052779A patent/JPS5614148A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197456A (en) * | 1981-05-29 | 1982-12-03 | Toshiba Corp | Metallic ion detector |
| JPS5923864A (en) * | 1982-07-28 | 1984-02-07 | Toyota Motor Corp | sliding member |
| US4593225A (en) * | 1984-08-31 | 1986-06-03 | Zenith Electronics Corporation | Tension mask colar cathode ray tube |
| WO2009045090A3 (en) * | 2007-10-05 | 2009-06-04 | Mimos Berhad | Integrated thermally compensated ph egfet-flow rate sensor |
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