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JPS56162839A - Silicon etchant and etching method for silicon single crystal using the same - Google Patents

Silicon etchant and etching method for silicon single crystal using the same

Info

Publication number
JPS56162839A
JPS56162839A JP6676980A JP6676980A JPS56162839A JP S56162839 A JPS56162839 A JP S56162839A JP 6676980 A JP6676980 A JP 6676980A JP 6676980 A JP6676980 A JP 6676980A JP S56162839 A JPS56162839 A JP S56162839A
Authority
JP
Japan
Prior art keywords
silicon
etchant
plane
same
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6676980A
Other languages
Japanese (ja)
Other versions
JPH0243333B2 (en
Inventor
Daisuke Ueda
Hiromitsu Takagi
Kota Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP6676980A priority Critical patent/JPS56162839A/en
Publication of JPS56162839A publication Critical patent/JPS56162839A/en
Publication of JPH0243333B2 publication Critical patent/JPH0243333B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain a flat (100) plane in an anisotropic etching for a silicon sigle crystal by adding a surfactant to an etchant. CONSTITUTION:An oxidized film is formed on an Si single crystalline substrate having a (100) plane, a rectangular window such as a gate of an MOSFET is opened at the film, the (100) plane is exposed, and is etched. An etchant employs an aqueous ammonia saturated solution, and 0.01vol% of surfactant is mixed with the aqueous solution. Thus, it can eliminate the projection generated on the etching surface to form a flat etching surface.
JP6676980A 1980-05-19 1980-05-19 Silicon etchant and etching method for silicon single crystal using the same Granted JPS56162839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6676980A JPS56162839A (en) 1980-05-19 1980-05-19 Silicon etchant and etching method for silicon single crystal using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6676980A JPS56162839A (en) 1980-05-19 1980-05-19 Silicon etchant and etching method for silicon single crystal using the same

Publications (2)

Publication Number Publication Date
JPS56162839A true JPS56162839A (en) 1981-12-15
JPH0243333B2 JPH0243333B2 (en) 1990-09-28

Family

ID=13325408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6676980A Granted JPS56162839A (en) 1980-05-19 1980-05-19 Silicon etchant and etching method for silicon single crystal using the same

Country Status (1)

Country Link
JP (1) JPS56162839A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855323A (en) * 1981-09-26 1983-04-01 Toshiba Corp Etching solution for silicon and silicon oxide film
KR100612985B1 (en) * 1998-03-12 2006-10-31 삼성전자주식회사 Manufacturing Method Of Liquid Crystal Display

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134770A (en) * 1974-04-15 1975-10-25
JPS50147281A (en) * 1974-05-15 1975-11-26

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134770A (en) * 1974-04-15 1975-10-25
JPS50147281A (en) * 1974-05-15 1975-11-26

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855323A (en) * 1981-09-26 1983-04-01 Toshiba Corp Etching solution for silicon and silicon oxide film
KR100612985B1 (en) * 1998-03-12 2006-10-31 삼성전자주식회사 Manufacturing Method Of Liquid Crystal Display

Also Published As

Publication number Publication date
JPH0243333B2 (en) 1990-09-28

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