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JPS56158474A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56158474A
JPS56158474A JP6245180A JP6245180A JPS56158474A JP S56158474 A JPS56158474 A JP S56158474A JP 6245180 A JP6245180 A JP 6245180A JP 6245180 A JP6245180 A JP 6245180A JP S56158474 A JPS56158474 A JP S56158474A
Authority
JP
Japan
Prior art keywords
layer
collector
type
transistor
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6245180A
Other languages
Japanese (ja)
Inventor
Akio Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6245180A priority Critical patent/JPS56158474A/en
Publication of JPS56158474A publication Critical patent/JPS56158474A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To easily expand the depletion layer and to obtain a high withstand voltage for the planar type transistor used on subject semiconductor device by a method wherein the annular groove, protected by an insulating layer from the surface of a substrate, is provided in the collector region located around the connected section of a base collector. CONSTITUTION:The NPN (PNP) transistor of a planar type is formed by providing a P(N) type base layer 2 and an N(P) type emitter layer 3 on an N(or P) type substrate 1. Within the expanding range of the depletion layer 8 located outside the connected surface of the base collector, the annular groove 4 surrounding the junction part is provided and a construction is formed in such manner that the insulating layer 5 is protected by having it buried in the groove 4. Through these procedures, the depletion layer 8 of the collector can be spread out over the groove section 4, and said spreading section of the layer 8 is not terminated on the surface adjacent to the connected surface, the breakdown voltage close to the bulk can be obtained and the transistor of high withstand voltage can be obtained.
JP6245180A 1980-05-12 1980-05-12 Semiconductor device Pending JPS56158474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6245180A JPS56158474A (en) 1980-05-12 1980-05-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6245180A JPS56158474A (en) 1980-05-12 1980-05-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56158474A true JPS56158474A (en) 1981-12-07

Family

ID=13200574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6245180A Pending JPS56158474A (en) 1980-05-12 1980-05-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158474A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831338B1 (en) 1998-10-19 2004-12-14 Stmicroelectronics S.A. Power component bearing interconnections

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831338B1 (en) 1998-10-19 2004-12-14 Stmicroelectronics S.A. Power component bearing interconnections

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