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JPS56158143A - Reduced pressure type vapor phase growing device - Google Patents

Reduced pressure type vapor phase growing device

Info

Publication number
JPS56158143A
JPS56158143A JP6428780A JP6428780A JPS56158143A JP S56158143 A JPS56158143 A JP S56158143A JP 6428780 A JP6428780 A JP 6428780A JP 6428780 A JP6428780 A JP 6428780A JP S56158143 A JPS56158143 A JP S56158143A
Authority
JP
Japan
Prior art keywords
reaction
gas
tube
reduced pressure
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6428780A
Other languages
Japanese (ja)
Other versions
JPS6128371B2 (en
Inventor
Kyohiko Kotani
Junichi Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6428780A priority Critical patent/JPS56158143A/en
Priority to DE19813118848 priority patent/DE3118848C2/en
Publication of JPS56158143A publication Critical patent/JPS56158143A/en
Publication of JPS6128371B2 publication Critical patent/JPS6128371B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PURPOSE: To remove the product of reaction and improve workability and the quality of formed films by providing a plasma generating chamber to the gas lead- in tube of a reduced pressure type vapor phase growing device, and supplying a reaction gas for cleaning into this chamber.
CONSTITUTION: A plasma generating chamber 7 is provided to the gas lead-in tube 6 on the reduced pressure type vapor phase growing device, and an electrode 8 for generating plasma connected to an RF oscillator 9 is disposed therein. Also, a supply chamber 10 for reaction gas for cleaning is branched and is changed over by means of valves 11, 12. At the time of cleaning a reaction tube 1, a gas is supplied into the chamber 7, and the electrode 8 is energized to generate gas plasma which is sent into the tube 1, thereby causing reaction with plasma radicals. The deposits of polycrystals or the like produced at this time are discharged through an exhaust pipe 5. Since the reaction tube can be cleaned as it is in this way, the workability of the device is improved and the formed films of good quality are produced at all times.
COPYRIGHT: (C)1981,JPO&Japio
JP6428780A 1980-05-12 1980-05-12 Reduced pressure type vapor phase growing device Granted JPS56158143A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP6428780A JPS56158143A (en) 1980-05-12 1980-05-12 Reduced pressure type vapor phase growing device
DE19813118848 DE3118848C2 (en) 1980-05-12 1981-05-12 Low pressure coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6428780A JPS56158143A (en) 1980-05-12 1980-05-12 Reduced pressure type vapor phase growing device

Publications (2)

Publication Number Publication Date
JPS56158143A true JPS56158143A (en) 1981-12-05
JPS6128371B2 JPS6128371B2 (en) 1986-06-30

Family

ID=13253861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6428780A Granted JPS56158143A (en) 1980-05-12 1980-05-12 Reduced pressure type vapor phase growing device

Country Status (1)

Country Link
JP (1) JPS56158143A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061722U (en) * 1983-09-30 1985-04-30 株式会社島津製作所 Film forming equipment
JPS60192327A (en) * 1984-03-14 1985-09-30 Toshiba Corp Method for washing semiconductor manufacturing apparatus
JPS6114726A (en) * 1984-06-29 1986-01-22 Fujitsu Ltd Semiconductor substrate processing method
JPS6281032A (en) * 1985-10-03 1987-04-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216482A (en) * 1975-07-30 1977-02-07 Toshiba Corp Surface treatment apparatus using activated gas

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216482A (en) * 1975-07-30 1977-02-07 Toshiba Corp Surface treatment apparatus using activated gas

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061722U (en) * 1983-09-30 1985-04-30 株式会社島津製作所 Film forming equipment
JPS60192327A (en) * 1984-03-14 1985-09-30 Toshiba Corp Method for washing semiconductor manufacturing apparatus
JPS6114726A (en) * 1984-06-29 1986-01-22 Fujitsu Ltd Semiconductor substrate processing method
JPS6281032A (en) * 1985-10-03 1987-04-14 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6128371B2 (en) 1986-06-30

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