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JPS5216482A - Surface treatment apparatus using activated gas - Google Patents

Surface treatment apparatus using activated gas

Info

Publication number
JPS5216482A
JPS5216482A JP9195775A JP9195775A JPS5216482A JP S5216482 A JPS5216482 A JP S5216482A JP 9195775 A JP9195775 A JP 9195775A JP 9195775 A JP9195775 A JP 9195775A JP S5216482 A JPS5216482 A JP S5216482A
Authority
JP
Japan
Prior art keywords
surface treatment
treatment apparatus
activated gas
undertaken
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9195775A
Other languages
Japanese (ja)
Other versions
JPS5532423B2 (en
Inventor
Masahiko Hirose
Masaaki Yada
Hitoshi Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9195775A priority Critical patent/JPS5216482A/en
Publication of JPS5216482A publication Critical patent/JPS5216482A/en
Publication of JPS5532423B2 publication Critical patent/JPS5532423B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

PURPOSE:In a surface treatment apparatus wherein chemical reaction of activated gas with a material is undertaken by discharge, a meshed body, for example, metal screen, etc., is placed particularly immediate before the material to be treated whereby improvement in treatment efficiency and reduction of treating time are achieved.
JP9195775A 1975-07-30 1975-07-30 Surface treatment apparatus using activated gas Granted JPS5216482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9195775A JPS5216482A (en) 1975-07-30 1975-07-30 Surface treatment apparatus using activated gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9195775A JPS5216482A (en) 1975-07-30 1975-07-30 Surface treatment apparatus using activated gas

Publications (2)

Publication Number Publication Date
JPS5216482A true JPS5216482A (en) 1977-02-07
JPS5532423B2 JPS5532423B2 (en) 1980-08-25

Family

ID=14041037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9195775A Granted JPS5216482A (en) 1975-07-30 1975-07-30 Surface treatment apparatus using activated gas

Country Status (1)

Country Link
JP (1) JPS5216482A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348566U (en) * 1976-09-28 1978-04-24
JPS5429572A (en) * 1977-08-09 1979-03-05 Fujitsu Ltd Plasma unit
JPS5467772A (en) * 1977-11-10 1979-05-31 Nippon Telegr & Teleph Corp <Ntt> Evening method of etching patterns
JPS558682U (en) * 1978-07-03 1980-01-21
JPS56158143A (en) * 1980-05-12 1981-12-05 Mitsubishi Electric Corp Reduced pressure type vapor phase growing device
US4368092A (en) * 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
JPS6043489A (en) * 1984-07-04 1985-03-08 Hitachi Ltd Molecular beam deposition device
JPS62278269A (en) * 1986-05-28 1987-12-03 Canon Inc Formation of functional thin tin oxide film
JPH1028688A (en) * 1996-03-27 1998-02-03 Ethicon Inc Blacking method for surgical sewing needle
WO2006087778A1 (en) * 2005-02-16 2006-08-24 Mitsubishi Heavy Industries, Ltd. Method of surface treatment for titanium alloy member of aerospace instrument

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5348566U (en) * 1976-09-28 1978-04-24
JPS6138608B2 (en) * 1977-08-09 1986-08-30 Fujitsu Ltd
JPS5429572A (en) * 1977-08-09 1979-03-05 Fujitsu Ltd Plasma unit
JPS5467772A (en) * 1977-11-10 1979-05-31 Nippon Telegr & Teleph Corp <Ntt> Evening method of etching patterns
JPS558682U (en) * 1978-07-03 1980-01-21
JPS56158143A (en) * 1980-05-12 1981-12-05 Mitsubishi Electric Corp Reduced pressure type vapor phase growing device
JPS6128371B2 (en) * 1980-05-12 1986-06-30 Mitsubishi Electric Corp
US4368092A (en) * 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
JPS6043489A (en) * 1984-07-04 1985-03-08 Hitachi Ltd Molecular beam deposition device
JPS6229508B2 (en) * 1984-07-04 1987-06-26 Hitachi Ltd
JPS62278269A (en) * 1986-05-28 1987-12-03 Canon Inc Formation of functional thin tin oxide film
JPH1028688A (en) * 1996-03-27 1998-02-03 Ethicon Inc Blacking method for surgical sewing needle
WO2006087778A1 (en) * 2005-02-16 2006-08-24 Mitsubishi Heavy Industries, Ltd. Method of surface treatment for titanium alloy member of aerospace instrument
US8252130B2 (en) 2005-02-16 2012-08-28 Mitsubishi Heavy Industries, Ltd. Surface treatment for titanium alloy member for aerospace equipment

Also Published As

Publication number Publication date
JPS5532423B2 (en) 1980-08-25

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