JPS56156987A - Semiconductor storage circuit - Google Patents
Semiconductor storage circuitInfo
- Publication number
- JPS56156987A JPS56156987A JP5975180A JP5975180A JPS56156987A JP S56156987 A JPS56156987 A JP S56156987A JP 5975180 A JP5975180 A JP 5975180A JP 5975180 A JP5975180 A JP 5975180A JP S56156987 A JPS56156987 A JP S56156987A
- Authority
- JP
- Japan
- Prior art keywords
- ground
- mos
- buses
- decrease
- bit line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
PURPOSE:To simplify wiring layouts, reduce chip areas and prevent the decrease in signal effective value by connecting the source contacts of MOS elements in bit line selectors to the common source contacts of FF amplifiers thereby reducing contact buses. CONSTITUTION:When the common source nodal point 113 of MOS type elements Q110-Q112 by which the antilogarithms or complementary numbers of specific addresses are applied to the gates of respective bit line selectors 2a... are connected to the common nodal point 103... which are grounded and connected via the MOS element Q107 of FFs 1a... amplifying the signals of bit lines 101..., the ground buses connecting the nodal points 113 and the ground can be reduced. This makes it possible to increase the degree of freedom, to simplify wiring layouts, and to reduce chip areas. There is no effect of electrostatic capacity and the decrease in signal effective value is prevented by the reduction in the ground buses.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5975180A JPS56156987A (en) | 1980-05-06 | 1980-05-06 | Semiconductor storage circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5975180A JPS56156987A (en) | 1980-05-06 | 1980-05-06 | Semiconductor storage circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56156987A true JPS56156987A (en) | 1981-12-03 |
JPS615234B2 JPS615234B2 (en) | 1986-02-17 |
Family
ID=13122256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5975180A Granted JPS56156987A (en) | 1980-05-06 | 1980-05-06 | Semiconductor storage circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56156987A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294695A (en) * | 1985-06-20 | 1986-12-25 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
-
1980
- 1980-05-06 JP JP5975180A patent/JPS56156987A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61294695A (en) * | 1985-06-20 | 1986-12-25 | Mitsubishi Electric Corp | Semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPS615234B2 (en) | 1986-02-17 |
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