JPS56140664A - Semiconductor device and manufacture - Google Patents
Semiconductor device and manufactureInfo
- Publication number
- JPS56140664A JPS56140664A JP4418980A JP4418980A JPS56140664A JP S56140664 A JPS56140664 A JP S56140664A JP 4418980 A JP4418980 A JP 4418980A JP 4418980 A JP4418980 A JP 4418980A JP S56140664 A JPS56140664 A JP S56140664A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- film
- gate electrode
- gate
- neighboring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an enough high drain withstand in spite of a short channel length by a method wherein a gate insulating film thickness is made large only near the drain, the first gate electrode is formed at a location other than that neighboring the drain and the second gate electrode is formed on the insulating films neighboring the first gate electrode and the drain through the insulating film. CONSTITUTION:A poly-Si layer 28 is formed which covers selectively a gate oxide film 26 and a field oxide film 12 on a P type Si substrate 11. A thermal oxidation is made to form an SiO2 thin film 29 on the layer 28 and a film 11 in a prescribed region 27 is made an SiO2 thick film 30. Then, the thick film 30 is covered with the second poly-Si layer 31, applied with a resist mask and etched to form the gate electrodes in a double structure, and N<+> type source 15 and drain 14 are formed by an ion-injection and annealing treatment. Then, the film 30 is covered with PSG 21 and attached with electrodes 22, 23. With the double gate structure, a threshold voltage can be decreased due to the thinness of an oxide film under the first gate electrode, and the electric field between the source and drain is relaxed by an oxide thick film under the second gate electrode neighboring the drain to enable to the drain withstand to be improved in the short channel structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4418980A JPS56140664A (en) | 1980-04-04 | 1980-04-04 | Semiconductor device and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4418980A JPS56140664A (en) | 1980-04-04 | 1980-04-04 | Semiconductor device and manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56140664A true JPS56140664A (en) | 1981-11-04 |
Family
ID=12684618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4418980A Pending JPS56140664A (en) | 1980-04-04 | 1980-04-04 | Semiconductor device and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56140664A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04122071A (en) * | 1990-09-12 | 1992-04-22 | Semiconductor Res Found | Insulated gate transistor |
-
1980
- 1980-04-04 JP JP4418980A patent/JPS56140664A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04122071A (en) * | 1990-09-12 | 1992-04-22 | Semiconductor Res Found | Insulated gate transistor |
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