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JPS5613779A - Photoelectric converter and its preparation - Google Patents

Photoelectric converter and its preparation

Info

Publication number
JPS5613779A
JPS5613779A JP9009979A JP9009979A JPS5613779A JP S5613779 A JPS5613779 A JP S5613779A JP 9009979 A JP9009979 A JP 9009979A JP 9009979 A JP9009979 A JP 9009979A JP S5613779 A JPS5613779 A JP S5613779A
Authority
JP
Japan
Prior art keywords
electrodes
transparent
electrode
layer
electromotive force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9009979A
Other languages
English (en)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP9009979A priority Critical patent/JPS5613779A/ja
Publication of JPS5613779A publication Critical patent/JPS5613779A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP9009979A 1979-07-16 1979-07-16 Photoelectric converter and its preparation Pending JPS5613779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9009979A JPS5613779A (en) 1979-07-16 1979-07-16 Photoelectric converter and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9009979A JPS5613779A (en) 1979-07-16 1979-07-16 Photoelectric converter and its preparation

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP59074256A Division JPS60100483A (ja) 1984-04-13 1984-04-13 光起電力発生装置
JP2092739A Division JPH031577A (ja) 1990-04-06 1990-04-06 光電変換装置

Publications (1)

Publication Number Publication Date
JPS5613779A true JPS5613779A (en) 1981-02-10

Family

ID=13989067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9009979A Pending JPS5613779A (en) 1979-07-16 1979-07-16 Photoelectric converter and its preparation

Country Status (1)

Country Link
JP (1) JPS5613779A (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456782A (en) * 1981-03-20 1984-06-26 Fuji Electric Co., Ltd. Solar cell device
JPS61256375A (ja) * 1985-05-10 1986-11-13 シチズン時計株式会社 液晶駆動用薄膜ダイオード
US4645866A (en) * 1984-08-18 1987-02-24 Kyocera Corporation Photovoltaic device and a method of producing the same
EP0213910A2 (en) 1985-08-24 1987-03-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer
US4663494A (en) * 1984-07-19 1987-05-05 Sanyo Electric Co., Ltd. Photovoltaic device
JPS6367772A (ja) * 1986-09-09 1988-03-26 Fuji Xerox Co Ltd イメ−ジセンサおよびその製造方法
JPH0271566A (ja) * 1987-10-28 1990-03-12 Kanegafuchi Chem Ind Co Ltd Ｍｏｓ型ｆｅｔゲート駆動用太陽電池アレイ
JPH0491482A (ja) * 1990-08-01 1992-03-24 Mitsubishi Electric Corp 太陽電池の製造方法
JPH04130671A (ja) * 1990-09-20 1992-05-01 Sanyo Electric Co Ltd 光起電力装置
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456782A (en) * 1981-03-20 1984-06-26 Fuji Electric Co., Ltd. Solar cell device
US4663494A (en) * 1984-07-19 1987-05-05 Sanyo Electric Co., Ltd. Photovoltaic device
US4645866A (en) * 1984-08-18 1987-02-24 Kyocera Corporation Photovoltaic device and a method of producing the same
JPS61256375A (ja) * 1985-05-10 1986-11-13 シチズン時計株式会社 液晶駆動用薄膜ダイオード
EP0213910A2 (en) 1985-08-24 1987-03-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer
JPS6367772A (ja) * 1986-09-09 1988-03-26 Fuji Xerox Co Ltd イメ−ジセンサおよびその製造方法
JPH0271566A (ja) * 1987-10-28 1990-03-12 Kanegafuchi Chem Ind Co Ltd Ｍｏｓ型ｆｅｔゲート駆動用太陽電池アレイ
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
JPH0491482A (ja) * 1990-08-01 1992-03-24 Mitsubishi Electric Corp 太陽電池の製造方法
JPH04130671A (ja) * 1990-09-20 1992-05-01 Sanyo Electric Co Ltd 光起電力装置

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