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JPS5353270A - Composite diode - Google Patents

Composite diode

Info

Publication number
JPS5353270A
JPS5353270A JP12781376A JP12781376A JPS5353270A JP S5353270 A JPS5353270 A JP S5353270A JP 12781376 A JP12781376 A JP 12781376A JP 12781376 A JP12781376 A JP 12781376A JP S5353270 A JPS5353270 A JP S5353270A
Authority
JP
Japan
Prior art keywords
providing
composite diode
type
type domain
sillcide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12781376A
Other languages
Japanese (ja)
Inventor
Tadashi Ikeda
Tsutomu Koga
Takashi Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12781376A priority Critical patent/JPS5353270A/en
Publication of JPS5353270A publication Critical patent/JPS5353270A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

Landscapes

  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a good V-I characteristrics over a broad voltage range, by providing the Schottky barrier and the P type domain adjacent to this on the N type Si substrate, covering a part of them with the Mo-sillcide layer, and providing the Al electrode on this and the exposed P type domain.
JP12781376A 1976-10-26 1976-10-26 Composite diode Pending JPS5353270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12781376A JPS5353270A (en) 1976-10-26 1976-10-26 Composite diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12781376A JPS5353270A (en) 1976-10-26 1976-10-26 Composite diode

Publications (1)

Publication Number Publication Date
JPS5353270A true JPS5353270A (en) 1978-05-15

Family

ID=14969297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12781376A Pending JPS5353270A (en) 1976-10-26 1976-10-26 Composite diode

Country Status (1)

Country Link
JP (1) JPS5353270A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008147670A1 (en) * 2007-05-30 2008-12-04 Intersil Americas Inc. Junction barrier schottky diode
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
US8368166B2 (en) 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008147670A1 (en) * 2007-05-30 2008-12-04 Intersil Americas Inc. Junction barrier schottky diode
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
US7829970B2 (en) 2007-05-30 2010-11-09 Intersil Americas Inc. Junction barrier schottky diode having high reverse blocking voltage
US8101511B2 (en) 2007-05-30 2012-01-24 Intersil Americas Inc. Method of manufacturing a junction barrier Schottky diode with dual silicides
US8368166B2 (en) 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
US8647971B2 (en) 2007-05-30 2014-02-11 Intersil Americas Inc. Method of manufacturing junction barrier schottky diode with dual silicides

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