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JPS56131966A - Method for bonding semiconductor chip - Google Patents

Method for bonding semiconductor chip

Info

Publication number
JPS56131966A
JPS56131966A JP3402180A JP3402180A JPS56131966A JP S56131966 A JPS56131966 A JP S56131966A JP 3402180 A JP3402180 A JP 3402180A JP 3402180 A JP3402180 A JP 3402180A JP S56131966 A JPS56131966 A JP S56131966A
Authority
JP
Japan
Prior art keywords
glass
chip
bonding
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3402180A
Other languages
Japanese (ja)
Inventor
Tamotsu Tominaga
Teruyoshi Mihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP3402180A priority Critical patent/JPS56131966A/en
Publication of JPS56131966A publication Critical patent/JPS56131966A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To perform the titled bonding without heat distortion when an Si monocrystal is bonded on the substrate having almost the same thermal expansion coefficient, by ion implanting additive materials on at least one of the two to convert into the glass of low softening point and heating for fluidizing. CONSTITUTION:The bonding surface 9 of a BSG group glass substrate is mirror finished. The vitreous composition of the subface layer is denatured to be formed into a glass layer 10 of a low melting point in the manner that: the additive ion with Pb, B as the main component and contains Zn, V, Al, Si and the like if necessary is implanted to the depth of several thousands Angstrom together with a suitable amount of O. Then, on the surface of the glass player 10, the bonding surface of the Si chip is abutted, fluidizing the glass layer 10 to bond the chip 1 with the substrate 4 closely. The amount of the additive ion to be implanted will freely control the softening point of the bonding layer and also select the temperature which does not deteriorate the chip. For the purpose of decreasing the thermal expansion coefficient, V, Zn, etc. are added while for effective improvement of hygroscopic property, the addition of Al, Si and the like is preferable.
JP3402180A 1980-03-19 1980-03-19 Method for bonding semiconductor chip Pending JPS56131966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3402180A JPS56131966A (en) 1980-03-19 1980-03-19 Method for bonding semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3402180A JPS56131966A (en) 1980-03-19 1980-03-19 Method for bonding semiconductor chip

Publications (1)

Publication Number Publication Date
JPS56131966A true JPS56131966A (en) 1981-10-15

Family

ID=12402720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3402180A Pending JPS56131966A (en) 1980-03-19 1980-03-19 Method for bonding semiconductor chip

Country Status (1)

Country Link
JP (1) JPS56131966A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887880A (en) * 1981-11-20 1983-05-25 Hitachi Ltd Semiconductor diaphragm sensor
US5034044A (en) * 1988-05-11 1991-07-23 General Electric Company Method of bonding a silicon package for a power semiconductor device
JP2008221252A (en) * 2007-03-09 2008-09-25 Kurosaki Harima Corp Sliding nozzle device and plate used in the device
JP2010514172A (en) * 2006-12-22 2010-04-30 パルス・エムイーエムエス・アンパルトセルスカブ Microphone assembly using underfill agent with low coefficient of thermal expansion
US8152033B2 (en) 2007-03-09 2012-04-10 Krosakiharima Corporation Sliding nozzle device and plate used for the device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887880A (en) * 1981-11-20 1983-05-25 Hitachi Ltd Semiconductor diaphragm sensor
US5034044A (en) * 1988-05-11 1991-07-23 General Electric Company Method of bonding a silicon package for a power semiconductor device
JP2010514172A (en) * 2006-12-22 2010-04-30 パルス・エムイーエムエス・アンパルトセルスカブ Microphone assembly using underfill agent with low coefficient of thermal expansion
JP2008221252A (en) * 2007-03-09 2008-09-25 Kurosaki Harima Corp Sliding nozzle device and plate used in the device
US8152033B2 (en) 2007-03-09 2012-04-10 Krosakiharima Corporation Sliding nozzle device and plate used for the device

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