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JPS56118370A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56118370A
JPS56118370A JP2075680A JP2075680A JPS56118370A JP S56118370 A JPS56118370 A JP S56118370A JP 2075680 A JP2075680 A JP 2075680A JP 2075680 A JP2075680 A JP 2075680A JP S56118370 A JPS56118370 A JP S56118370A
Authority
JP
Japan
Prior art keywords
substrate
employment
fold
stress
offset
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2075680A
Other languages
Japanese (ja)
Inventor
Naotake Tadama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2075680A priority Critical patent/JPS56118370A/en
Publication of JPS56118370A publication Critical patent/JPS56118370A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10D64/666—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum the conductor further comprising additional layers

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To form conductive layer with metals with higher melting point, smaller resistance and more excellent thermal properties, and to prevent stress on a substrate resulting from employment of such materials. CONSTITUTION:When a gate electrode of an FET is made in a twofold structure of Mo and W, the possible stress on an Si substrate can be offset. If it is made in a single-fold Mo, tension stress occurs on the substrate. If it is made in a single-fold W, compression stress occurs. Therefore if made in the twofold structure of Mo and W the stresses offset each offer, and the possible deterioration in electrical properties to be caused by interface problems etc. and exfoliation can be prevented and a device with excellent resistance and thermal properties can be obtained. Order of stacking does not matter and employment of Mo-W alloy is equally effective.
JP2075680A 1980-02-21 1980-02-21 Semiconductor device Pending JPS56118370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2075680A JPS56118370A (en) 1980-02-21 1980-02-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2075680A JPS56118370A (en) 1980-02-21 1980-02-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56118370A true JPS56118370A (en) 1981-09-17

Family

ID=12036026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2075680A Pending JPS56118370A (en) 1980-02-21 1980-02-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56118370A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213075A (en) * 1985-07-10 1987-01-21 Nec Corp Semiconductor device
JPS6286865A (en) * 1985-10-14 1987-04-21 Mitsubishi Electric Corp Mos transistor
US4712291A (en) * 1985-06-06 1987-12-15 The United States Of America As Represented By The Secretary Of The Air Force Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
GB2328793B (en) * 1997-08-26 2000-06-07 Lg Electronics Inc Thin-film transistor and method of making same
USRE45579E1 (en) 1997-03-04 2015-06-23 Lg Display Co., Ltd. Thin-film transistor and method of making same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4712291A (en) * 1985-06-06 1987-12-15 The United States Of America As Represented By The Secretary Of The Air Force Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPS6213075A (en) * 1985-07-10 1987-01-21 Nec Corp Semiconductor device
JPS6286865A (en) * 1985-10-14 1987-04-21 Mitsubishi Electric Corp Mos transistor
JPH0478188B2 (en) * 1985-10-14 1992-12-10 Mitsubishi Electric Corp
USRE45579E1 (en) 1997-03-04 2015-06-23 Lg Display Co., Ltd. Thin-film transistor and method of making same
USRE45841E1 (en) 1997-03-04 2016-01-12 Lg Display Co., Ltd. Thin-film transistor and method of making same
GB2328793B (en) * 1997-08-26 2000-06-07 Lg Electronics Inc Thin-film transistor and method of making same

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