JPS5597468A - Ion plating equipment - Google Patents
Ion plating equipmentInfo
- Publication number
- JPS5597468A JPS5597468A JP425679A JP425679A JPS5597468A JP S5597468 A JPS5597468 A JP S5597468A JP 425679 A JP425679 A JP 425679A JP 425679 A JP425679 A JP 425679A JP S5597468 A JPS5597468 A JP S5597468A
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- gas
- evaporating material
- ion plating
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007733 ion plating Methods 0.000 title abstract 3
- 238000001704 evaporation Methods 0.000 abstract 12
- 230000008020 evaporation Effects 0.000 abstract 8
- 239000000463 material Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To stabilize evapoartion rate through separation of evaporation source and gas discharge plasma by applying D.C. voltage across the vacuum chamber and a box that contains the evaporation source mounted in the vacuum chamber of an ion plating unit. CONSTITUTION:The vacuum chamber 1 is evacuated through exhaust system 15-10<-5> Torr or less, and introuduction gas such as O2 and N2 is fed through gas stopper 16 and valve 17 to a pressure of about 10<-4>-10<-2> Torr. The evaporation source 4 containing evaporating material 9 is housed in box 3, which is connected to positive of the D.C. supply 2. The electrode 7 that supports substrate 5 is connected to the negative. The evaporating material is heated by A.C. supply 12 and is evaporated. A high-frequency electrode 11 is placed between the substrate 5 and the evaporation source 4 so that high frequncy discharge is generated within the chamber 1. This allows the evaporation source 4 to be separated from high frequency discharge plasma, and prevents high frequency gas ions from penetrating through box opening 18. This reduces deterioration of the evaporation source 4, and prevents compound to deposit on molten evaporating material 8 or opening of the evaporation source. As a result, the evaporation rate is stabilized to provide reliable ion plating of evaporating material and introduction gas compound on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP425679A JPS5597468A (en) | 1979-01-17 | 1979-01-17 | Ion plating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP425679A JPS5597468A (en) | 1979-01-17 | 1979-01-17 | Ion plating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5597468A true JPS5597468A (en) | 1980-07-24 |
| JPS6139394B2 JPS6139394B2 (en) | 1986-09-03 |
Family
ID=11579451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP425679A Granted JPS5597468A (en) | 1979-01-17 | 1979-01-17 | Ion plating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5597468A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55144391A (en) * | 1979-04-25 | 1980-11-11 | Toshiba Corp | Pipe working method |
| JP2022546072A (en) * | 2019-08-30 | 2022-11-02 | ダイソン・テクノロジー・リミテッド | deposition system |
-
1979
- 1979-01-17 JP JP425679A patent/JPS5597468A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55144391A (en) * | 1979-04-25 | 1980-11-11 | Toshiba Corp | Pipe working method |
| JP2022546072A (en) * | 2019-08-30 | 2022-11-02 | ダイソン・テクノロジー・リミテッド | deposition system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6139394B2 (en) | 1986-09-03 |
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