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JPS5595369A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5595369A
JPS5595369A JP237879A JP237879A JPS5595369A JP S5595369 A JPS5595369 A JP S5595369A JP 237879 A JP237879 A JP 237879A JP 237879 A JP237879 A JP 237879A JP S5595369 A JPS5595369 A JP S5595369A
Authority
JP
Japan
Prior art keywords
region
type
gate
neighborhood
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP237879A
Other languages
Japanese (ja)
Other versions
JPS6346587B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP237879A priority Critical patent/JPS5595369A/en
Priority to US06/018,774 priority patent/US4364072A/en
Priority to DE2910566A priority patent/DE2910566C2/en
Publication of JPS5595369A publication Critical patent/JPS5595369A/en
Priority to US06/386,313 priority patent/US4504847A/en
Publication of JPS6346587B2 publication Critical patent/JPS6346587B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices

Landscapes

  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain an electrostatic induction type transistor with a short traveling time and a high conversion transconductance by making shorter than usual a region in which the potential gradient in the neighborhood of an intrinsic gate is gentle, and further bringing the intrinsic gate close to a high impurity concentration source region. CONSTITUTION:An n<->-type layer 13 is grown on n<+>-type semiconductor substrate 11, which is to become a drain region. Here, two p<+>-type gate regions 14 are diffused at a distance from each other. Between these regions in layer 13, n<-> or i- type intrinsic gate region 113 of an extremely low impurity concentration is provided. On top of this, n<+>-types source region 12 is diffused. Subsequently, the entire surface is covered with an SiO2 film 5, and openings are made. Source electrode 2 is fitted to region 12. Gate electrodes 4 are connected in parallel to two rgions 14. On the back of substrate 11, drain electrode 1 is fitted. By this, it is possible to produce a potential peak in the neighborhood of region 12. As a result, the traveling velocity of electrons injected from region 12 becomes high, and the conversion transconductance becomes large.
JP237879A 1978-03-17 1979-01-11 Semiconductor device Granted JPS5595369A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP237879A JPS5595369A (en) 1979-01-11 1979-01-11 Semiconductor device
US06/018,774 US4364072A (en) 1978-03-17 1979-03-08 Static induction type semiconductor device with multiple doped layers for potential modification
DE2910566A DE2910566C2 (en) 1978-03-17 1979-03-17 Static induction semiconductor device
US06/386,313 US4504847A (en) 1978-03-17 1982-06-08 Static induction type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP237879A JPS5595369A (en) 1979-01-11 1979-01-11 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5595369A true JPS5595369A (en) 1980-07-19
JPS6346587B2 JPS6346587B2 (en) 1988-09-16

Family

ID=11527573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP237879A Granted JPS5595369A (en) 1978-03-17 1979-01-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5595369A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793439A (en) * 1988-07-13 1998-08-11 Seiko Epson Corporation Image control device for use in a video multiplexing system for superimposition of scalable video data streams upon a background video data stream
US5929933A (en) * 1988-07-13 1999-07-27 Seiko Epson Corporation Video multiplexing system for superimposition of scalable video data streams upon a background video data stream

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128765A (en) * 1974-09-04 1976-03-11 Tokyo Shibaura Electric Co TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5128765A (en) * 1974-09-04 1976-03-11 Tokyo Shibaura Electric Co TATEGATASETSUGODENKAIKOKAHANDOTAISOCHI

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5793439A (en) * 1988-07-13 1998-08-11 Seiko Epson Corporation Image control device for use in a video multiplexing system for superimposition of scalable video data streams upon a background video data stream
US5929933A (en) * 1988-07-13 1999-07-27 Seiko Epson Corporation Video multiplexing system for superimposition of scalable video data streams upon a background video data stream
US5929870A (en) * 1988-07-13 1999-07-27 Seiko Epson Corporation Video multiplexing system for superimposition of scalable video data streams upon a background video data stream
US5973706A (en) * 1988-07-13 1999-10-26 Seiko Epson Corporation Video multiplexing system for superimposition of scalable video data streams upon a background video data stream
US5986633A (en) * 1988-07-13 1999-11-16 Seiko Epson Corporation Video multiplexing system for superimposition of scalable video data streams upon a background video data stream
USRE37879E1 (en) 1988-07-13 2002-10-15 Seiko Epson Corporation Image control device for use in a video multiplexing system for superimposition of scalable video data streams upon a background video data stream

Also Published As

Publication number Publication date
JPS6346587B2 (en) 1988-09-16

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