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JPS5593256A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5593256A
JPS5593256A JP150979A JP150979A JPS5593256A JP S5593256 A JPS5593256 A JP S5593256A JP 150979 A JP150979 A JP 150979A JP 150979 A JP150979 A JP 150979A JP S5593256 A JPS5593256 A JP S5593256A
Authority
JP
Japan
Prior art keywords
silicon
isotope
ratio
layer
natural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP150979A
Other languages
Japanese (ja)
Other versions
JPS6337508B2 (en
Inventor
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP150979A priority Critical patent/JPS5593256A/en
Publication of JPS5593256A publication Critical patent/JPS5593256A/en
Publication of JPS6337508B2 publication Critical patent/JPS6337508B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve the characteristic of semiconductor device by positively employing 14Si30 of heavy atomic weight of silicon isotope.
CONSTITUTION: There are three types of stabilized isotope of silicon existing in the natural world. However, almost all of them are represented by 14Si28. Compared with 14Si28, the 14Si30 has a larger mass, and as such has smaller lattice vibration. Consequently, the mobility of its electron and positive hole are high and the energy gap is minimized. Therefore, collector layer and emitter layer, that is, monocrystal substrate 4, layers 5 and 7 are formed with silicon mainly composed of Si28 as usual. Especially base layer 6 is formed by a layer of concentrated Si30 or silicon whose Si30 exists at sufficiently larger ratio than the ratio of its natural existence. The hFE of transistor thus obtained is significantly larger than that of transistor made of silicon whose Si isotope exists at a natural ratio.
COPYRIGHT: (C)1980,JPO&Japio
JP150979A 1979-01-10 1979-01-10 Semiconductor device Granted JPS5593256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP150979A JPS5593256A (en) 1979-01-10 1979-01-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP150979A JPS5593256A (en) 1979-01-10 1979-01-10 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5593256A true JPS5593256A (en) 1980-07-15
JPS6337508B2 JPS6337508B2 (en) 1988-07-26

Family

ID=11503443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP150979A Granted JPS5593256A (en) 1979-01-10 1979-01-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5593256A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992004731A1 (en) * 1990-09-05 1992-03-19 Yale University Isotopically enriched semiconductor devices
US5442191A (en) * 1990-09-05 1995-08-15 Yale University Isotopically enriched semiconductor devices
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
JP2006013510A (en) * 2004-06-23 2006-01-12 Agere Systems Inc Device using isotopically enriched silicon and processing method for its manufacture

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992004731A1 (en) * 1990-09-05 1992-03-19 Yale University Isotopically enriched semiconductor devices
US5144409A (en) * 1990-09-05 1992-09-01 Yale University Isotopically enriched semiconductor devices
US5442191A (en) * 1990-09-05 1995-08-15 Yale University Isotopically enriched semiconductor devices
US5917195A (en) * 1995-02-17 1999-06-29 B.A. Painter, Iii Phonon resonator and method for its production
JP2006013510A (en) * 2004-06-23 2006-01-12 Agere Systems Inc Device using isotopically enriched silicon and processing method for its manufacture

Also Published As

Publication number Publication date
JPS6337508B2 (en) 1988-07-26

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