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JPS5591216A - Microwave amplifier - Google Patents

Microwave amplifier

Info

Publication number
JPS5591216A
JPS5591216A JP16476378A JP16476378A JPS5591216A JP S5591216 A JPS5591216 A JP S5591216A JP 16476378 A JP16476378 A JP 16476378A JP 16476378 A JP16476378 A JP 16476378A JP S5591216 A JPS5591216 A JP S5591216A
Authority
JP
Japan
Prior art keywords
inductors
bias circuit
bias
low resistance
power consumption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16476378A
Other languages
Japanese (ja)
Other versions
JPS6119168B2 (en
Inventor
Norio Hidaka
Kinshiro Kosemura
Yoshitami Aono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16476378A priority Critical patent/JPS5591216A/en
Publication of JPS5591216A publication Critical patent/JPS5591216A/en
Publication of JPS6119168B2 publication Critical patent/JPS6119168B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Filters And Equalizers (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To reduce the power consumption of the bias circuit by connecting the bias circuit of the microwave amplifier circuit to the power source via the inductor which is covered round with the wave absorbing substance. CONSTITUTION:The bias circuit for amplifier element 5 is connected to each bias source via 1st inductors L5 and L6 plus 2nd inductors 6 and 7 each. The 1st inductors feature the mere inductance and show the low resistance value to the DC. While the surfaces of 2nd inductors 6 and 7 are covered with wave absorbing substance 20 and thus can block highly effectively the leak of the high frequency to outside but with the low resistance secured to the DC. As a result, the power consumption can be reduced for the bias circuit.
JP16476378A 1978-12-28 1978-12-28 Microwave amplifier Granted JPS5591216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16476378A JPS5591216A (en) 1978-12-28 1978-12-28 Microwave amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16476378A JPS5591216A (en) 1978-12-28 1978-12-28 Microwave amplifier

Publications (2)

Publication Number Publication Date
JPS5591216A true JPS5591216A (en) 1980-07-10
JPS6119168B2 JPS6119168B2 (en) 1986-05-16

Family

ID=15799455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16476378A Granted JPS5591216A (en) 1978-12-28 1978-12-28 Microwave amplifier

Country Status (1)

Country Link
JP (1) JPS5591216A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082822U (en) * 1983-11-10 1985-06-08 沖電気工業株式会社 microwave circuit
JPS62188815U (en) * 1986-05-20 1987-12-01
US4841253A (en) * 1987-04-15 1989-06-20 Harris Corporation Multiple spiral inductors for DC biasing of an amplifier
US4864250A (en) * 1987-01-29 1989-09-05 Harris Corporation Distributed amplifier having improved D.C. biasing and voltage standing wave ratio performance
JPH08335835A (en) * 1995-04-04 1996-12-17 Matsushita Electric Ind Co Ltd High frequency amplifier
WO1998006174A1 (en) * 1996-08-05 1998-02-12 Mitsubishi Denki Kabushiki Kaisha High-frequency integrated circuit for high-frequency radio transmitter-receiver suppressed in influence of high-frequency power leakage

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6082822U (en) * 1983-11-10 1985-06-08 沖電気工業株式会社 microwave circuit
JPS62188815U (en) * 1986-05-20 1987-12-01
US4864250A (en) * 1987-01-29 1989-09-05 Harris Corporation Distributed amplifier having improved D.C. biasing and voltage standing wave ratio performance
US4841253A (en) * 1987-04-15 1989-06-20 Harris Corporation Multiple spiral inductors for DC biasing of an amplifier
JPH08335835A (en) * 1995-04-04 1996-12-17 Matsushita Electric Ind Co Ltd High frequency amplifier
WO1998006174A1 (en) * 1996-08-05 1998-02-12 Mitsubishi Denki Kabushiki Kaisha High-frequency integrated circuit for high-frequency radio transmitter-receiver suppressed in influence of high-frequency power leakage
GB2331879A (en) * 1996-08-05 1999-06-02 Mitsubishi Electric Corp High frequency intergrated circuit for high-frequency radio transmitter-receiver suppressed in influence of high-frequency power leakage
GB2331879B (en) * 1996-08-05 2001-03-28 Mitsubishi Electric Corp Radio-frequency integrated circuit for a radio-frequency wireless transmitter-receiver with reduced influence by radio-frequency power leakage
US6308047B1 (en) 1996-08-05 2001-10-23 Mitsubishi Denki Kabushiki Kaisha Radio-frequency integrated circuit for a radio-frequency wireless transmitter-receiver with reduced influence by radio-frequency power leakage

Also Published As

Publication number Publication date
JPS6119168B2 (en) 1986-05-16

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