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JPS5588374A - Charge transferring device - Google Patents

Charge transferring device

Info

Publication number
JPS5588374A
JPS5588374A JP16176478A JP16176478A JPS5588374A JP S5588374 A JPS5588374 A JP S5588374A JP 16176478 A JP16176478 A JP 16176478A JP 16176478 A JP16176478 A JP 16176478A JP S5588374 A JPS5588374 A JP S5588374A
Authority
JP
Japan
Prior art keywords
electrodes
transferring
phase
electrode
wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16176478A
Other languages
Japanese (ja)
Other versions
JPS5726429B2 (en
Inventor
Hiroshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16176478A priority Critical patent/JPS5588374A/en
Publication of JPS5588374A publication Critical patent/JPS5588374A/en
Publication of JPS5726429B2 publication Critical patent/JPS5726429B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/478—Four-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent the breaking of mother wires connected with the extended ends of transferring electrodes by leading out, of the extended ends of transferring electrodes, those belonging to a certain phase onto a common plane and shortening those belonging to other phases and leading them out onto a different common plane. CONSTITUTION:On a silicon substrate 21 provided with channel stoppers 22 and 23, the first polysilicon layer is formed all over via a silicon oxide film 24, then adding impurities to alternate phases, the first phase transferring electrode 25 and the third phase transferring electrode 26 are formed. Next, after etching off the part of field A to which impurities are not added, the second polysilicon layer is formed via the silicon oxide film to the middle part of the joining part B of lead wires from electrodes with the mother wires, and adding impurities to positions offset from the first and the third phase transferring electrodes 25 and 26, the second phase transferring electrode 28 and the fourth transferring electrode 29 are formed. By so doing, mother wires phi1, phi3 ; phi2, phi4 connected with the electrodes 25, 26; 28, 29 are arranged on flat faces and their breakage can be prevented.
JP16176478A 1978-12-27 1978-12-27 Charge transferring device Granted JPS5588374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16176478A JPS5588374A (en) 1978-12-27 1978-12-27 Charge transferring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16176478A JPS5588374A (en) 1978-12-27 1978-12-27 Charge transferring device

Publications (2)

Publication Number Publication Date
JPS5588374A true JPS5588374A (en) 1980-07-04
JPS5726429B2 JPS5726429B2 (en) 1982-06-04

Family

ID=15741441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16176478A Granted JPS5588374A (en) 1978-12-27 1978-12-27 Charge transferring device

Country Status (1)

Country Link
JP (1) JPS5588374A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160372A (en) * 1986-12-24 1988-07-04 Toshiba Corp solid-state imaging device
US4910568A (en) * 1986-05-26 1990-03-20 Fujitsu Limited Image sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133572A (en) * 1974-06-28 1976-03-22 Texas Instruments Inc

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133572A (en) * 1974-06-28 1976-03-22 Texas Instruments Inc

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910568A (en) * 1986-05-26 1990-03-20 Fujitsu Limited Image sensor
JPS63160372A (en) * 1986-12-24 1988-07-04 Toshiba Corp solid-state imaging device

Also Published As

Publication number Publication date
JPS5726429B2 (en) 1982-06-04

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