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JPS5638865A - Manufacture of charge transfer device - Google Patents

Manufacture of charge transfer device

Info

Publication number
JPS5638865A
JPS5638865A JP11411579A JP11411579A JPS5638865A JP S5638865 A JPS5638865 A JP S5638865A JP 11411579 A JP11411579 A JP 11411579A JP 11411579 A JP11411579 A JP 11411579A JP S5638865 A JPS5638865 A JP S5638865A
Authority
JP
Japan
Prior art keywords
oxide film
film
electrodes
electrode
eaves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11411579A
Other languages
Japanese (ja)
Inventor
Koichi Sekine
Isao Nagae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11411579A priority Critical patent/JPS5638865A/en
Publication of JPS5638865A publication Critical patent/JPS5638865A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To decrease the coupling capacity between the electrodes by overetching the first electrode film, leaving the resistmask employed as an eaves shape, then forming the second electrode film so as to cover only the eaves portion. CONSTITUTION:An oxide film 8, the first electrode film 9, and an oxide film 10 are sequentially formed on a semiconductor substrate 7; a hole 11 is provided in the oxide film 10; and the etching is performed. The etching is performed so that the electrode film 9 (separated into 91, 92...) is overetched. Therefore, the oxide film 10 has eaves portions 12 with the length L3 of 1-2mum. Then, an oxide film 14 is provided on the sides of the first electrodes 91, 92..., and the second electrode films 151, 152... are provided so that they are overlapped with the portions 12. Since the electrostatic capacitance between the first and second electrodes are generated only at the portion the oxide film 14 is intervened, the coupling capacity can be decreased.
JP11411579A 1979-09-07 1979-09-07 Manufacture of charge transfer device Pending JPS5638865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11411579A JPS5638865A (en) 1979-09-07 1979-09-07 Manufacture of charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11411579A JPS5638865A (en) 1979-09-07 1979-09-07 Manufacture of charge transfer device

Publications (1)

Publication Number Publication Date
JPS5638865A true JPS5638865A (en) 1981-04-14

Family

ID=14629501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11411579A Pending JPS5638865A (en) 1979-09-07 1979-09-07 Manufacture of charge transfer device

Country Status (1)

Country Link
JP (1) JPS5638865A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6346770A (en) * 1986-08-14 1988-02-27 Nec Corp Change coupled device
JPH0258668U (en) * 1988-10-19 1990-04-26
JP2001244450A (en) * 2000-02-29 2001-09-07 Fuji Film Microdevices Co Ltd Solid-state image pick-up device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6346770A (en) * 1986-08-14 1988-02-27 Nec Corp Change coupled device
JPH0258668U (en) * 1988-10-19 1990-04-26
JP2001244450A (en) * 2000-02-29 2001-09-07 Fuji Film Microdevices Co Ltd Solid-state image pick-up device

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