JPS5588368A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5588368A JPS5588368A JP16380878A JP16380878A JPS5588368A JP S5588368 A JPS5588368 A JP S5588368A JP 16380878 A JP16380878 A JP 16380878A JP 16380878 A JP16380878 A JP 16380878A JP S5588368 A JPS5588368 A JP S5588368A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- capacitor
- oxide film
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000015654 memory Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53163808A JPS607389B2 (ja) | 1978-12-26 | 1978-12-26 | 半導体装置の製造方法 |
| US06/107,286 US4322881A (en) | 1978-12-26 | 1979-12-26 | Method for manufacturing semiconductor memory devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP53163808A JPS607389B2 (ja) | 1978-12-26 | 1978-12-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5588368A true JPS5588368A (en) | 1980-07-04 |
| JPS607389B2 JPS607389B2 (ja) | 1985-02-23 |
Family
ID=15781091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53163808A Expired JPS607389B2 (ja) | 1978-12-26 | 1978-12-26 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4322881A (ja) |
| JP (1) | JPS607389B2 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5793572A (en) * | 1980-12-03 | 1982-06-10 | Nec Corp | Manufacture of semiconductor device |
| JPS60216577A (ja) * | 1984-01-26 | 1985-10-30 | ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド | 半導体メモリ構造体及びその製造方法 |
| US4761678A (en) * | 1986-02-26 | 1988-08-02 | Nec Corporation | Integrated circuit semiconductor device |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4654680A (en) * | 1980-09-24 | 1987-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Sidewall gate IGFET |
| US4353159A (en) * | 1981-05-11 | 1982-10-12 | Rca Corporation | Method of forming self-aligned contact in semiconductor devices |
| US4352236A (en) * | 1981-07-24 | 1982-10-05 | Intel Corporation | Double field oxidation process |
| US4441249A (en) * | 1982-05-26 | 1984-04-10 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit capacitor |
| JPH0612619B2 (ja) * | 1982-09-22 | 1994-02-16 | 株式会社日立製作所 | 半導体メモリ装置 |
| DE3304651A1 (de) * | 1983-02-10 | 1984-08-16 | Siemens AG, 1000 Berlin und 8000 München | Dynamische halbleiterspeicherzelle mit wahlfreiem zugriff (dram) und verfahren zu ihrer herstellung |
| US4592799A (en) * | 1983-05-09 | 1986-06-03 | Sony Corporation | Method of recrystallizing a polycrystalline, amorphous or small grain material |
| US4466177A (en) * | 1983-06-30 | 1984-08-21 | International Business Machines Corporation | Storage capacitor optimization for one device FET dynamic RAM cell |
| JPS6014462A (ja) * | 1983-07-05 | 1985-01-25 | Oki Electric Ind Co Ltd | 半導体メモリ素子 |
| JP2748070B2 (ja) * | 1992-05-20 | 1998-05-06 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| US6780718B2 (en) * | 1993-11-30 | 2004-08-24 | Stmicroelectronics, Inc. | Transistor structure and method for making same |
| US5830575A (en) * | 1996-09-16 | 1998-11-03 | Sandia National Laboratories | Memory device using movement of protons |
| US6159829A (en) * | 1996-09-16 | 2000-12-12 | Warren; William L. | Memory device using movement of protons |
| US6140157A (en) * | 1998-08-05 | 2000-10-31 | Sandia Corporation | Memory device using movement of protons |
| US20080299780A1 (en) * | 2007-06-01 | 2008-12-04 | Uv Tech Systems, Inc. | Method and apparatus for laser oxidation and reduction |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4152823A (en) * | 1975-06-10 | 1979-05-08 | Micro Power Systems | High temperature refractory metal contact assembly and multiple layer interconnect structure |
| US4151537A (en) * | 1976-03-10 | 1979-04-24 | Gte Laboratories Incorporated | Gate electrode for MNOS semiconductor memory device |
| US4114256A (en) * | 1977-06-24 | 1978-09-19 | Bell Telephone Laboratories, Incorporated | Reliable metal-to-junction contacts in large-scale-integrated devices |
| US4163985A (en) * | 1977-09-30 | 1979-08-07 | The United States Of America As Represented By The Secretary Of The Air Force | Nonvolatile punch through memory cell with buried n+ region in channel |
| US4149307A (en) * | 1977-12-28 | 1979-04-17 | Hughes Aircraft Company | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts |
| US4174252A (en) * | 1978-07-26 | 1979-11-13 | Rca Corporation | Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes |
| US4240845A (en) * | 1980-02-04 | 1980-12-23 | International Business Machines Corporation | Method of fabricating random access memory device |
-
1978
- 1978-12-26 JP JP53163808A patent/JPS607389B2/ja not_active Expired
-
1979
- 1979-12-26 US US06/107,286 patent/US4322881A/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5793572A (en) * | 1980-12-03 | 1982-06-10 | Nec Corp | Manufacture of semiconductor device |
| JPH022298B2 (ja) * | 1980-12-03 | 1990-01-17 | Nippon Electric Co | |
| JPS60216577A (ja) * | 1984-01-26 | 1985-10-30 | ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド | 半導体メモリ構造体及びその製造方法 |
| US4761678A (en) * | 1986-02-26 | 1988-08-02 | Nec Corporation | Integrated circuit semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US4322881A (en) | 1982-04-06 |
| JPS607389B2 (ja) | 1985-02-23 |
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