JPS5530868A - Method of making semiconductor device - Google Patents
Method of making semiconductor deviceInfo
- Publication number
- JPS5530868A JPS5530868A JP10453278A JP10453278A JPS5530868A JP S5530868 A JPS5530868 A JP S5530868A JP 10453278 A JP10453278 A JP 10453278A JP 10453278 A JP10453278 A JP 10453278A JP S5530868 A JPS5530868 A JP S5530868A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- oxidation
- film
- silicon substrate
- oxidation techniques
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000002950 deficient Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To prevent the occurrence of any defective crystal formation in the manufacture of semiconductor devices by virtue of selected oxidation using the plate oxidation techniques and further to minimize the leakage of reverse current by the p-n junction.
CONSTITUTION: An n-type silicon substrate 3 is overlaid with an oxide film 2 by the plate oxidation techniques, while over the oxide film is formed a nitride silicon film 1. This nitride silicon film is then etched off, to form a source electrode 4 and a drain electrode 4a with p-type impurities of high concentration. Thereafter, a gate oxide film 5 is formed with contact holes 7 through each of which aluminum wiring 6 is applied. The plate oxidation techniques have an oxidation reaction proceed not on the interface of the silicon substrate and the oxide film but on the surface of the latter, and yet under a relatively low temperature of more or less 100°C, thus any distortions can be prevented from occurring in crystallization.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10453278A JPS5530868A (en) | 1978-08-28 | 1978-08-28 | Method of making semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10453278A JPS5530868A (en) | 1978-08-28 | 1978-08-28 | Method of making semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5530868A true JPS5530868A (en) | 1980-03-04 |
Family
ID=14383095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10453278A Pending JPS5530868A (en) | 1978-08-28 | 1978-08-28 | Method of making semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5530868A (en) |
-
1978
- 1978-08-28 JP JP10453278A patent/JPS5530868A/en active Pending
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