JPS5571045A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPS5571045A JPS5571045A JP14418578A JP14418578A JPS5571045A JP S5571045 A JPS5571045 A JP S5571045A JP 14418578 A JP14418578 A JP 14418578A JP 14418578 A JP14418578 A JP 14418578A JP S5571045 A JPS5571045 A JP S5571045A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- oxidized
- nickel
- lead frame
- coat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
PURPOSE: To curtail cost of a lead frame by a method wherein a base material consists of aluminum, the surface with pellet is plated with nickel not oxidized and the surface of a lead is coated with a film by aluminum solder dipping in the lead frame for a semiconductor device.
CONSTITUTION: A common frame 1, a set of leads 2 coming in three pieces, small plates 3 connected to each lead tip, and a common branch 4 called dam are formed in series of aluminum material on a lead frame. A coat 5 of nickel not oxidized is formed at the center of each small plate 3 in a partial plating across in stripe. A semiconductor pellet 6 of small-signal transistor is mounted on a coat 5a of nickel not oxidized on the central lead, and a wire 7 is bonded from an electrode of the pellet to zones 3b, 3c on the tips of the other two leads not plated with nickel not oxidized. A coat 9 is formed on the lead part through aluminum solder dipping.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14418578A JPS5571045A (en) | 1978-11-24 | 1978-11-24 | Lead frame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14418578A JPS5571045A (en) | 1978-11-24 | 1978-11-24 | Lead frame |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5571045A true JPS5571045A (en) | 1980-05-28 |
Family
ID=15356169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14418578A Pending JPS5571045A (en) | 1978-11-24 | 1978-11-24 | Lead frame |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5571045A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02110982A (en) * | 1989-09-08 | 1990-04-24 | Sharp Corp | Manufacture of semiconductor device |
JPH10163519A (en) * | 1996-10-01 | 1998-06-19 | Toshiba Corp | Semiconductor device and method of manufacturing semiconductor device |
-
1978
- 1978-11-24 JP JP14418578A patent/JPS5571045A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02110982A (en) * | 1989-09-08 | 1990-04-24 | Sharp Corp | Manufacture of semiconductor device |
JPH0553310B2 (en) * | 1989-09-08 | 1993-08-09 | Sharp Kk | |
JPH10163519A (en) * | 1996-10-01 | 1998-06-19 | Toshiba Corp | Semiconductor device and method of manufacturing semiconductor device |
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