JPS5519846A - Lead frame for resin sealed type semiconductor device - Google Patents
Lead frame for resin sealed type semiconductor deviceInfo
- Publication number
- JPS5519846A JPS5519846A JP9259678A JP9259678A JPS5519846A JP S5519846 A JPS5519846 A JP S5519846A JP 9259678 A JP9259678 A JP 9259678A JP 9259678 A JP9259678 A JP 9259678A JP S5519846 A JPS5519846 A JP S5519846A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- plate
- layer
- area
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
PURPOSE: To do away with a film carrier to have only one process of bonding by protruding toward a chip placing area one side of Ni coated layer on a plate without a core.
CONSTITUTION: Photoresist masks 2, 2' are coated except the surface area remaining after the patterning of copper or copper alloy plate 1. Next, Ni plating layers 3, 3' are formed on a bare surface of the plate 1. In this case, the resist film 2' has been formed so that the Ni plating layer 3' is to have an inside-extending area 3" compared with the other plating layer 3. Next, resist 2, 2' are removed and the bare area of the plate 1 is removed with Ni plating layers 3, 3' as masks. Next, Sn or Au layer 4 is coated on Ni plating layers 3, 3' to form a lead frame 5. And, a chip 7 is placed into a chip placing area 6 with Ni plating layer 3" protruding, and heat pressure is applied through a bump 8. This lead frame 5 does not need a film carrier and make the process to be a bonding one only.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9259678A JPS5519846A (en) | 1978-07-31 | 1978-07-31 | Lead frame for resin sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9259678A JPS5519846A (en) | 1978-07-31 | 1978-07-31 | Lead frame for resin sealed type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5519846A true JPS5519846A (en) | 1980-02-12 |
Family
ID=14058822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9259678A Pending JPS5519846A (en) | 1978-07-31 | 1978-07-31 | Lead frame for resin sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5519846A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8288178B2 (en) * | 2008-08-11 | 2012-10-16 | Renesas Electronics Corporation | Lead frame, method of manufacturing the same, and method of manufacturing semiconductor device |
| CN103752970A (en) * | 2013-12-24 | 2014-04-30 | 广州金升阳科技有限公司 | Lead frame soldering method |
-
1978
- 1978-07-31 JP JP9259678A patent/JPS5519846A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8288178B2 (en) * | 2008-08-11 | 2012-10-16 | Renesas Electronics Corporation | Lead frame, method of manufacturing the same, and method of manufacturing semiconductor device |
| CN103752970A (en) * | 2013-12-24 | 2014-04-30 | 广州金升阳科技有限公司 | Lead frame soldering method |
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