JPS5570028A - Fabricating method of semiconductor device - Google Patents
Fabricating method of semiconductor deviceInfo
- Publication number
- JPS5570028A JPS5570028A JP14364378A JP14364378A JPS5570028A JP S5570028 A JPS5570028 A JP S5570028A JP 14364378 A JP14364378 A JP 14364378A JP 14364378 A JP14364378 A JP 14364378A JP S5570028 A JPS5570028 A JP S5570028A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- substrate
- photo resist
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000005187 foaming Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14364378A JPS5570028A (en) | 1978-11-20 | 1978-11-20 | Fabricating method of semiconductor device |
US06/047,241 US4253888A (en) | 1978-06-16 | 1979-06-11 | Pretreatment of photoresist masking layers resulting in higher temperature device processing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14364378A JPS5570028A (en) | 1978-11-20 | 1978-11-20 | Fabricating method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5570028A true JPS5570028A (en) | 1980-05-27 |
JPS6255693B2 JPS6255693B2 (ja) | 1987-11-20 |
Family
ID=15343543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14364378A Granted JPS5570028A (en) | 1978-06-16 | 1978-11-20 | Fabricating method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5570028A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0258834A (ja) * | 1988-07-21 | 1990-02-28 | Samsung Electron Co Ltd | 副生物を用いたリフトオフ工程 |
JPH04278536A (ja) * | 1991-03-06 | 1992-10-05 | Fujitsu Ltd | 半導体素子の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5346281A (en) * | 1976-10-08 | 1978-04-25 | Matsushita Electric Ind Co Ltd | Mask for semiconductor device and production of semiconductor device using the same |
JPS5373073A (en) * | 1976-12-11 | 1978-06-29 | Fujitsu Ltd | Treatment method for photo resist |
-
1978
- 1978-11-20 JP JP14364378A patent/JPS5570028A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5346281A (en) * | 1976-10-08 | 1978-04-25 | Matsushita Electric Ind Co Ltd | Mask for semiconductor device and production of semiconductor device using the same |
JPS5373073A (en) * | 1976-12-11 | 1978-06-29 | Fujitsu Ltd | Treatment method for photo resist |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0258834A (ja) * | 1988-07-21 | 1990-02-28 | Samsung Electron Co Ltd | 副生物を用いたリフトオフ工程 |
JPH04278536A (ja) * | 1991-03-06 | 1992-10-05 | Fujitsu Ltd | 半導体素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6255693B2 (ja) | 1987-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5249772A (en) | Process for production of semiconductor device | |
JPS5570028A (en) | Fabricating method of semiconductor device | |
JPS559414A (en) | Manufacturing method of semiconductor device | |
JPS5321576A (en) | Mask for x-ray exposure | |
JPS53108389A (en) | Manufacture for semiconductor device | |
JPS5591130A (en) | Production of semiconductor device | |
JPS5469090A (en) | Manufacture of semiconductor device | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS57148371A (en) | Manufacture of mesa type semiconductor device | |
JPS5448485A (en) | Photo etching method | |
JPS51111056A (en) | Diffused layer forming method | |
JPS52117550A (en) | Electrode formation method | |
JPS5246775A (en) | Method of forming photo mask | |
JPS5496369A (en) | Mask forming method | |
JPS568821A (en) | Formation of photoresist layer | |
JPS5522833A (en) | Manufacturing of semiconductor device | |
JPS5673439A (en) | Etching method | |
JPS527674A (en) | Method of producing semiconductor devices | |
JPS5475275A (en) | Manufacture of semiconductor device | |
JPS5562751A (en) | Method of forming aluminum wiring pattern | |
JPS56111265A (en) | Manufacture of semiconductor device | |
JPS57101668A (en) | Etching method | |
JPS551117A (en) | Manufacture of semiconductor device | |
JPS5313882A (en) | Production of semiconductor device | |
JPS5492179A (en) | Removing method for photo resist film |