[go: up one dir, main page]

JPS5561072A - Manufacture of diffusion matching type mis ic device - Google Patents

Manufacture of diffusion matching type mis ic device

Info

Publication number
JPS5561072A
JPS5561072A JP13430078A JP13430078A JPS5561072A JP S5561072 A JPS5561072 A JP S5561072A JP 13430078 A JP13430078 A JP 13430078A JP 13430078 A JP13430078 A JP 13430078A JP S5561072 A JPS5561072 A JP S5561072A
Authority
JP
Japan
Prior art keywords
diffusion
substrate
regions
film
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13430078A
Other languages
Japanese (ja)
Inventor
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13430078A priority Critical patent/JPS5561072A/en
Publication of JPS5561072A publication Critical patent/JPS5561072A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain MISIC having the desired threshold voltage, by forming shallow source and drain regions on a semiconductor substrate and operating diffusion in an inert gas atmosphere with a probe set on the regions.
CONSTITUTION: p+-Type base region 315 is formed by diffusion on p-type Si substrate 310, and thick field SiO2 film 320 on both ends of the substrate. Next, thin gate SiO2 film 316 is formed on the surface of substrate 310 surrounded by this and expanding to the end of region 315. On top of this is provided polycrystalline Si gate electrode 311. Subsequently, sandwiching electrode 311, shallow n-type source and drain regions 314, 314' are formed by diffusion in region 315 and substrate 310, and adjacent to these, polycrystalline Si conductors 317, 318 are formed. Next, the entire surface is covered with SiO2 film 319. An opening is made conductors 317, 318 and electrode 311. A probe is placed these exposed regions, and while the threshold voltage is being measured, regions 314, 314' are formed by injection-diffusion, and thereby the threshold voltage is set at the desired value.
COPYRIGHT: (C)1980,JPO&Japio
JP13430078A 1978-10-31 1978-10-31 Manufacture of diffusion matching type mis ic device Pending JPS5561072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13430078A JPS5561072A (en) 1978-10-31 1978-10-31 Manufacture of diffusion matching type mis ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13430078A JPS5561072A (en) 1978-10-31 1978-10-31 Manufacture of diffusion matching type mis ic device

Publications (1)

Publication Number Publication Date
JPS5561072A true JPS5561072A (en) 1980-05-08

Family

ID=15125054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13430078A Pending JPS5561072A (en) 1978-10-31 1978-10-31 Manufacture of diffusion matching type mis ic device

Country Status (1)

Country Link
JP (1) JPS5561072A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206164A (en) * 1982-05-10 1983-12-01 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206164A (en) * 1982-05-10 1983-12-01 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and its manufacturing method

Similar Documents

Publication Publication Date Title
JPS5623771A (en) Semiconductor memory
GB1396896A (en) Semiconductor devices including field effect and bipolar transistors
JPS5559759A (en) Semiconductor device
JPS5691470A (en) Semiconductor
JPS5633881A (en) Manufacture of semiconductor device
JPS5561072A (en) Manufacture of diffusion matching type mis ic device
JPS5727069A (en) Mos type simiconductor device
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS5588378A (en) Semiconductor device
JPS5552275A (en) Junction field effect transistor
JPS5575238A (en) Method of fabricating semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS5591874A (en) V-groove structure mosfet
JPS5572069A (en) Semiconductor device
JPS554964A (en) Manufacture of mos type semiconductor
JPS54101294A (en) Dummy mos semiconductor device
JPS54121071A (en) Insulator gate type field effect semiconductor device
JPS57192080A (en) Semiconductor device
JPS54114983A (en) Semiconductor device
JPS54154979A (en) Manufacture of insulated gate type semiconductor device
JPS5591866A (en) Manufacture of semiconductor device
JPS5518072A (en) Mos semiconductor device
JPS5493980A (en) Field-effect semicoductor device
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS5522878A (en) Insulation gate type field effect semiconductor device