JPS5556656A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5556656A JPS5556656A JP13021378A JP13021378A JPS5556656A JP S5556656 A JPS5556656 A JP S5556656A JP 13021378 A JP13021378 A JP 13021378A JP 13021378 A JP13021378 A JP 13021378A JP S5556656 A JPS5556656 A JP S5556656A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- voltage
- collector
- emitter
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To prevent damage due to high voltage between a collector and an emitter, by forming a constant-voltage diode by the junction of an inverted layer in the collector under a base electrode and a high concentration layer.
CONSTITUTION: An N+-layer 2 is provided in an N-type collector layer 1, and the concentration is adjusted. The breakdown voltage of a constant-voltage diode, which is formed by an inverted layer 3 resulted from the high-voltage application to the collector due to an inductance load and the layer 2, is made lower than the withstanding voltage between the collector and a base. Then, a P-type base layer 5 and an N+ emitter layer 6 are formed. A base electrode 4 is formed on an insulating film 7 along a portion of the layers 5 and 2, and an emitter electrode 8 is formed at the same time. Thereafter, lead wires 9 and 10 are attached, and a collector electrode 11 is attached to the layer 1. In this constitution, since the collector voltage is limited by the sum of the breakdown voltage of the constant voltage diode and the threshold voltage between the base and emitter, the transistor is not damaged by inverse high voltages.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13021378A JPS5556656A (en) | 1978-10-23 | 1978-10-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13021378A JPS5556656A (en) | 1978-10-23 | 1978-10-23 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5556656A true JPS5556656A (en) | 1980-04-25 |
Family
ID=15028786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13021378A Pending JPS5556656A (en) | 1978-10-23 | 1978-10-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5556656A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58500679A (en) * | 1981-05-06 | 1983-04-28 | ロ−ベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | planar transistor structure |
| JPS58111369A (en) * | 1981-12-24 | 1983-07-02 | Nippon Denso Co Ltd | semiconductor equipment |
| JPS58134467A (en) * | 1982-02-05 | 1983-08-10 | Nippon Denso Co Ltd | semiconductor equipment |
| US5596217A (en) * | 1981-12-24 | 1997-01-21 | Nippondenso Co., Ltd. | Semiconductor device including overvoltage protection diode |
-
1978
- 1978-10-23 JP JP13021378A patent/JPS5556656A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58500679A (en) * | 1981-05-06 | 1983-04-28 | ロ−ベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | planar transistor structure |
| JPS58111369A (en) * | 1981-12-24 | 1983-07-02 | Nippon Denso Co Ltd | semiconductor equipment |
| JPH0312458B2 (en) * | 1981-12-24 | 1991-02-20 | Nippon Denso Co | |
| US5596217A (en) * | 1981-12-24 | 1997-01-21 | Nippondenso Co., Ltd. | Semiconductor device including overvoltage protection diode |
| JPS58134467A (en) * | 1982-02-05 | 1983-08-10 | Nippon Denso Co Ltd | semiconductor equipment |
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