JPS553618A - Manufacturing method for semiconductor device - Google Patents
Manufacturing method for semiconductor deviceInfo
- Publication number
- JPS553618A JPS553618A JP7422978A JP7422978A JPS553618A JP S553618 A JPS553618 A JP S553618A JP 7422978 A JP7422978 A JP 7422978A JP 7422978 A JP7422978 A JP 7422978A JP S553618 A JPS553618 A JP S553618A
- Authority
- JP
- Japan
- Prior art keywords
- film
- diffusion
- sio
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a deep diffusion region in a short time with good reproductivity through a precise control of diffusion time as well as the thickness of a SiO2 film, when forming a P-type region by use of a diffusion source prepared by depositing the SiO2 film on a semiconductor substrate, opening windows and filling up the window with a high purity Al.
CONSTITUTION: This process comprises depositing a SiO2 film 12 on a N-type Si substrate 11, opening windows on a region where an Al(diffusion source is formed, and depositing an Al)film 13 of 99.9995% in purity on the entire surface. In this process, a filamentary material is used as Al and the formation of which is performed by use of electron beam heating method with in a vacuum chamber at pressures of less than 6×10-6 Torr with the substrate 11 being heated to 230W250°C. Next, all the Al film except for the film 13 within the windows are removed, and the substrate 11 is entered into the diffusion furnace and heated to 1250°C in a O2 gas for an initial period and thereafter in a N2 gas to form a deep P-type region 14 and a P-N juction 15. In this process, the diffusion time t(h) and the thickness X of the SiO2 film are controlled to satisfy 0.02≤X≤ 18t-0.76.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7422978A JPS553618A (en) | 1978-06-21 | 1978-06-21 | Manufacturing method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7422978A JPS553618A (en) | 1978-06-21 | 1978-06-21 | Manufacturing method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS553618A true JPS553618A (en) | 1980-01-11 |
Family
ID=13541126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7422978A Pending JPS553618A (en) | 1978-06-21 | 1978-06-21 | Manufacturing method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS553618A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51120184A (en) * | 1975-03-26 | 1976-10-21 | Philips Nv | Method of producing semiconductor device |
-
1978
- 1978-06-21 JP JP7422978A patent/JPS553618A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51120184A (en) * | 1975-03-26 | 1976-10-21 | Philips Nv | Method of producing semiconductor device |
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