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JPS5519838A - Three terminal control commutation element and its producing method - Google Patents

Three terminal control commutation element and its producing method

Info

Publication number
JPS5519838A
JPS5519838A JP9241578A JP9241578A JPS5519838A JP S5519838 A JPS5519838 A JP S5519838A JP 9241578 A JP9241578 A JP 9241578A JP 9241578 A JP9241578 A JP 9241578A JP S5519838 A JPS5519838 A JP S5519838A
Authority
JP
Japan
Prior art keywords
area
type
base
base plate
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9241578A
Other languages
Japanese (ja)
Other versions
JPS6248391B2 (en
Inventor
Kozo Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9241578A priority Critical patent/JPS5519838A/en
Publication of JPS5519838A publication Critical patent/JPS5519838A/en
Publication of JPS6248391B2 publication Critical patent/JPS6248391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To improve dV/dt resist amount by varying the impurity density of P type base area near the junction with N base area and by stabilizing it at other areas. CONSTITUTION:P type emitter area 2 is formed on one side of N type Si unicrystalline base plate 1. Next, P type impurity is shallowly diffused to have a surface of relatively lower density than the other side of the base plate 1, forming a part 3 of P type base area 3. Next, the remaining area 3b is formed to be in a fixed stable density of impurities. Thus, on one side of the base plate 1 is formed P type base area 3. Next, N type emitter area 4 is formed on a part of area 3 surface layer, then formed are an anode electrode 6, a cathode electrode 5, a gate area 7. Under this structure, a traverse resistance of the area 3 becomes lower so that the impression between electrodes 5, 6 to make the electrode 5 in positive electric potential increases the traverse current in area 3 and decreases the current flowing into area 4 among the current flowing in the junction between areas 1 and 3. Thus, dV/dt resist amount becomes greater.
JP9241578A 1978-07-27 1978-07-27 Three terminal control commutation element and its producing method Granted JPS5519838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9241578A JPS5519838A (en) 1978-07-27 1978-07-27 Three terminal control commutation element and its producing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9241578A JPS5519838A (en) 1978-07-27 1978-07-27 Three terminal control commutation element and its producing method

Publications (2)

Publication Number Publication Date
JPS5519838A true JPS5519838A (en) 1980-02-12
JPS6248391B2 JPS6248391B2 (en) 1987-10-13

Family

ID=14053778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9241578A Granted JPS5519838A (en) 1978-07-27 1978-07-27 Three terminal control commutation element and its producing method

Country Status (1)

Country Link
JP (1) JPS5519838A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115367A (en) * 1984-06-30 1986-01-23 Mitsuo Kusano Manufacture of gate turn-off thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115367A (en) * 1984-06-30 1986-01-23 Mitsuo Kusano Manufacture of gate turn-off thyristor
JPH0550858B2 (en) * 1984-06-30 1993-07-30 Mitsuo Kusano

Also Published As

Publication number Publication date
JPS6248391B2 (en) 1987-10-13

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