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JPS5519802A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5519802A
JPS5519802A JP9141278A JP9141278A JPS5519802A JP S5519802 A JPS5519802 A JP S5519802A JP 9141278 A JP9141278 A JP 9141278A JP 9141278 A JP9141278 A JP 9141278A JP S5519802 A JPS5519802 A JP S5519802A
Authority
JP
Japan
Prior art keywords
electrode
main surface
gate
pattern
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9141278A
Other languages
Japanese (ja)
Inventor
Katsushige Shomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9141278A priority Critical patent/JPS5519802A/en
Publication of JPS5519802A publication Critical patent/JPS5519802A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To provide a resistance layer pattern connecting controll electrode and principal electric current on the main surface and determine gate sensitivity selectively. CONSTITUTION:When whole main surface is applied with Al and pattern is formed by etching, it is formed by remaining thin line pattern already determined by previous examination and the like between a cathode electrode 11k and a gate electrode 11g. By this method the gate sensitivity can be determined desirably and the defect occured by depending upon the outer circuit is excluded.
JP9141278A 1978-07-04 1978-07-04 Semiconductor device Pending JPS5519802A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9141278A JPS5519802A (en) 1978-07-04 1978-07-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9141278A JPS5519802A (en) 1978-07-04 1978-07-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5519802A true JPS5519802A (en) 1980-02-12

Family

ID=14025655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141278A Pending JPS5519802A (en) 1978-07-04 1978-07-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5519802A (en)

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