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JPS55166954A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55166954A
JPS55166954A JP7500479A JP7500479A JPS55166954A JP S55166954 A JPS55166954 A JP S55166954A JP 7500479 A JP7500479 A JP 7500479A JP 7500479 A JP7500479 A JP 7500479A JP S55166954 A JPS55166954 A JP S55166954A
Authority
JP
Japan
Prior art keywords
type
epitaxial layer
high density
coated
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7500479A
Other languages
Japanese (ja)
Inventor
Yoshiharu Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7500479A priority Critical patent/JPS55166954A/en
Publication of JPS55166954A publication Critical patent/JPS55166954A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To form a semiconductor device in a method of fabricating it easily and stably by connecting the grounding electrode of a transistor element through a metallic wiring layer directly electrically to a semiconductor substrate. CONSTITUTION:A low density P-type silicon epitaxial layer 2 having an opening exposing the silicon substrate 1 is formed partly on the high density P-type silicon substrate 1, and a mesa high density N-type silicon epitaxial layer 3 and a low density N-type epitaxial layer 4 are formed thereon. P-type resion 4' and high density N-type region are formed on an epitaxial layer 4. A source electrode is coated on the N-type high density region, and a gate electrode 5 is coated on the P-type region 4'. Drain electrodes 7, 8 are coated on the epitaxial layer 3, and connected to bonding pads 14, 15. The gate electrodes 5 is connected to the bonding pad 11, and the source electrode 6 is connected from the back surface electrode 10 on the back surface of the silicon substrate 1 to the external circuit.
JP7500479A 1979-06-14 1979-06-14 Semiconductor device Pending JPS55166954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7500479A JPS55166954A (en) 1979-06-14 1979-06-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7500479A JPS55166954A (en) 1979-06-14 1979-06-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55166954A true JPS55166954A (en) 1980-12-26

Family

ID=13563610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7500479A Pending JPS55166954A (en) 1979-06-14 1979-06-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55166954A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009038392A (en) * 2003-05-15 2009-02-19 Panasonic Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009038392A (en) * 2003-05-15 2009-02-19 Panasonic Corp Semiconductor device

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