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JPS55165631A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55165631A
JPS55165631A JP7371579A JP7371579A JPS55165631A JP S55165631 A JPS55165631 A JP S55165631A JP 7371579 A JP7371579 A JP 7371579A JP 7371579 A JP7371579 A JP 7371579A JP S55165631 A JPS55165631 A JP S55165631A
Authority
JP
Japan
Prior art keywords
film
resist
electron beam
quinone
resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7371579A
Other languages
Japanese (ja)
Other versions
JPS588131B2 (en
Inventor
Hiroshi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7371579A priority Critical patent/JPS588131B2/en
Publication of JPS55165631A publication Critical patent/JPS55165631A/en
Publication of JPS588131B2 publication Critical patent/JPS588131B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To increase the sensitivity and to prevent the diminution of a film without impairing the resolution of a positive resist, by stacking a negative resist on a quinone-diazo series positive resist, exposing the resist to an electron beam, and developing the resist. CONSTITUTION:The quinone-diazo series positive resist 2 is applied on a substrate 1, and the negative resist 3 is stacked thereon. A speficied pattern 3' is exposed to an electron beam 4. If required, a ultraviolet ray 5 is irradiated all over the surface, and the resist 2 is fully sensitized. Since the resist 3 is not sensitized to the ultraviolet ray, it is not changed. The film 3 is developed and a film 3' is obtained. The film 2 is developed with the film 3' as a mask, and a film 2' is obtained. Since the upper surface of the film 2' is covered by the film 3', the film is not diminished. Therefore, amount of irradiation of the electron beam can be greatly decreased, irradiation time is greatly shortened, working efficiency is improved, fogging is not generated, and the resolution is not impaired.
JP7371579A 1979-06-12 1979-06-12 Manufacturing method of semiconductor device Expired JPS588131B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7371579A JPS588131B2 (en) 1979-06-12 1979-06-12 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7371579A JPS588131B2 (en) 1979-06-12 1979-06-12 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165631A true JPS55165631A (en) 1980-12-24
JPS588131B2 JPS588131B2 (en) 1983-02-14

Family

ID=13526186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7371579A Expired JPS588131B2 (en) 1979-06-12 1979-06-12 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS588131B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164531A (en) * 1980-05-21 1981-12-17 Hitachi Ltd Manufacture of semiconductor
JPS6221102A (en) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd Manufacture of fresnel lens

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4669811A (en) * 1983-11-17 1987-06-02 Pilkington P.E. Limited Optical filtering apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56164531A (en) * 1980-05-21 1981-12-17 Hitachi Ltd Manufacture of semiconductor
JPS6221102A (en) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd Manufacture of fresnel lens

Also Published As

Publication number Publication date
JPS588131B2 (en) 1983-02-14

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