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JPS55148441A - Complementary type mos-ic - Google Patents

Complementary type mos-ic

Info

Publication number
JPS55148441A
JPS55148441A JP5602379A JP5602379A JPS55148441A JP S55148441 A JPS55148441 A JP S55148441A JP 5602379 A JP5602379 A JP 5602379A JP 5602379 A JP5602379 A JP 5602379A JP S55148441 A JPS55148441 A JP S55148441A
Authority
JP
Japan
Prior art keywords
type
channel
diffusion layer
channel mos
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5602379A
Other languages
Japanese (ja)
Inventor
Matsuo Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP5602379A priority Critical patent/JPS55148441A/en
Publication of JPS55148441A publication Critical patent/JPS55148441A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enable the direct wiring between an n<+>-type Si lead wire of an n- channel and a p<+>-type Si lead wire of a p-channel in an Si gate CMOS by a method wherein both are connected directly and their connecting regions are wired by materials such as MoSi2 or the like. CONSTITUTION:A deep well of a p<->-diffusion layer 2 is formed in a substrate 1 of an n-type single crystal Si. A p-channel MOS is formed within an n-type substrate and an n-channel MOS is formed within a p-well respectively to form an Si gate structure. After a field oxide film 3 and a gate oxide film 4 are formed, they are covered by a polycrystalline Si film 5. At source and drain regions in n and p- channel MOS, perforated openings are provided, and a p<+>-diffusion layer 6 and an n<+>-diffusion layer 8 are formed by covering each channel sequentially. A connecting region between a p<+>-diffusion region and an n<+>-diffusion region in the polycrystalline Si film is perfolated, and a connection is made with materials such as MoSi2, WSi2, TiSi2, Mo, W, Ti, Cr. By this method a direct connection between channels both of p and n-type is enabled.
JP5602379A 1979-05-08 1979-05-08 Complementary type mos-ic Pending JPS55148441A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5602379A JPS55148441A (en) 1979-05-08 1979-05-08 Complementary type mos-ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5602379A JPS55148441A (en) 1979-05-08 1979-05-08 Complementary type mos-ic

Publications (1)

Publication Number Publication Date
JPS55148441A true JPS55148441A (en) 1980-11-19

Family

ID=13015454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5602379A Pending JPS55148441A (en) 1979-05-08 1979-05-08 Complementary type mos-ic

Country Status (1)

Country Link
JP (1) JPS55148441A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107056A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Semiconductor device
JPS57199260A (en) * 1981-05-29 1982-12-07 Texas Instruments Inc Silicide electrode for c-mos device and method of producing same
JPS582068A (en) * 1981-06-26 1983-01-07 Toshiba Corp Semiconductor device and its manufacturing method
JPS58138053A (en) * 1982-02-12 1983-08-16 Nec Corp Semiconductor device and manufacture thereof
JPS592363A (en) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド Complementary insulated gate field effect device
JPS594067A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
JPS5957469A (en) * 1982-09-28 1984-04-03 Fujitsu Ltd Semiconductor device
JPS59119863A (en) * 1982-12-27 1984-07-11 Seiko Epson Corp Semiconductor device
JPS6344754A (en) * 1987-05-28 1988-02-25 Seiko Epson Corp Complementary mos semiconductor device
JPH0883852A (en) * 1994-06-08 1996-03-26 Hyundai Electron Ind Co Ltd Semiconductor device and manufacturing method thereof

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107056A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Semiconductor device
JPS57199260A (en) * 1981-05-29 1982-12-07 Texas Instruments Inc Silicide electrode for c-mos device and method of producing same
JPH0430189B2 (en) * 1981-05-29 1992-05-21
JPS582068A (en) * 1981-06-26 1983-01-07 Toshiba Corp Semiconductor device and its manufacturing method
JPS58138053A (en) * 1982-02-12 1983-08-16 Nec Corp Semiconductor device and manufacture thereof
JPS592363A (en) * 1982-06-09 1984-01-07 テキサス・インスツルメンツ・インコ−ポレイテツド Complementary insulated gate field effect device
JPS594067A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
JPS5957469A (en) * 1982-09-28 1984-04-03 Fujitsu Ltd Semiconductor device
JPS59119863A (en) * 1982-12-27 1984-07-11 Seiko Epson Corp Semiconductor device
JPS6344754A (en) * 1987-05-28 1988-02-25 Seiko Epson Corp Complementary mos semiconductor device
JPH0883852A (en) * 1994-06-08 1996-03-26 Hyundai Electron Ind Co Ltd Semiconductor device and manufacturing method thereof
US6261882B1 (en) 1994-06-08 2001-07-17 Hyundai Electronics Industries Co., Ltd. Method for fabricating a semiconductor device

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