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JPS55145380A - Semiconductor photo coupler device - Google Patents

Semiconductor photo coupler device

Info

Publication number
JPS55145380A
JPS55145380A JP5371179A JP5371179A JPS55145380A JP S55145380 A JPS55145380 A JP S55145380A JP 5371179 A JP5371179 A JP 5371179A JP 5371179 A JP5371179 A JP 5371179A JP S55145380 A JPS55145380 A JP S55145380A
Authority
JP
Japan
Prior art keywords
semiconductor
photo coupler
type semiconductor
coupler device
semiconductor photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5371179A
Other languages
Japanese (ja)
Inventor
Masahiro Akitani
Tetsutada Sakurai
Kuniki Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5371179A priority Critical patent/JPS55145380A/en
Publication of JPS55145380A publication Critical patent/JPS55145380A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To improve the response sensitivity of a photo coupler and to enable the fabrication of the photo coupler inexpensively with high yield by isolating a semiconductor light emitting element and a semiconductor photodetector via an insulating layer by an ion implantation. CONSTITUTION:Nitrogen or oxygen ion is implanted into a semiconductor substrate 21 to form an insulating layer 23 so as to isolate a semiconductor portion 24 and a semiconductor portion 25. A p-type semiconductor layer 26 and an n-type semiconductor layer 28 are formed on the portion 24 to form a semiconductor light emitting element 34. An n-type semiconductor regions 25, 26 and p-type semiconductor region 37 are formed in the portion 25 to form a semiconductor photodetector 44.
JP5371179A 1979-05-01 1979-05-01 Semiconductor photo coupler device Pending JPS55145380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5371179A JPS55145380A (en) 1979-05-01 1979-05-01 Semiconductor photo coupler device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5371179A JPS55145380A (en) 1979-05-01 1979-05-01 Semiconductor photo coupler device

Publications (1)

Publication Number Publication Date
JPS55145380A true JPS55145380A (en) 1980-11-12

Family

ID=12950405

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5371179A Pending JPS55145380A (en) 1979-05-01 1979-05-01 Semiconductor photo coupler device

Country Status (1)

Country Link
JP (1) JPS55145380A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129468A (en) * 1983-01-14 1984-07-25 Toshiba Corp Composite optical semiconductor device
US6916673B2 (en) * 1999-12-22 2005-07-12 Micronas Gmbh Method for producing an optical transmitting and receiving device and a transmitting and receiving device produced according to said method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923586A (en) * 1972-06-23 1974-03-02
JPS4939233A (en) * 1972-08-21 1974-04-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4923586A (en) * 1972-06-23 1974-03-02
JPS4939233A (en) * 1972-08-21 1974-04-12

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59129468A (en) * 1983-01-14 1984-07-25 Toshiba Corp Composite optical semiconductor device
JPH0343790B2 (en) * 1983-01-14 1991-07-03 Tokyo Shibaura Electric Co
US6916673B2 (en) * 1999-12-22 2005-07-12 Micronas Gmbh Method for producing an optical transmitting and receiving device and a transmitting and receiving device produced according to said method

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