JPS55143039A - Treating method of semiconductor wafer with heat - Google Patents
Treating method of semiconductor wafer with heatInfo
- Publication number
- JPS55143039A JPS55143039A JP5029979A JP5029979A JPS55143039A JP S55143039 A JPS55143039 A JP S55143039A JP 5029979 A JP5029979 A JP 5029979A JP 5029979 A JP5029979 A JP 5029979A JP S55143039 A JPS55143039 A JP S55143039A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- produced
- wafer
- sio2 film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005247 gettering Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 150000002926 oxygen Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To perform the gettering of point defects out of a device making region in a substrate and manufacture a device of good properties, by coating a polycrystalline semiconductor layer on the surface of a single-crystal semiconductor wafer whereon the device is to be manufactured and by treating the semiconductor layer with heat under an oxidizing atmosphere to change the layer into an oxide. CONSTITUTION:To manufacture and MOS IC or the like, the surface of an Si wafer 1 is cleaned up and a polycrystalline Si layer 2 is epitaxially grown on the surface the first. The thickness of the layer 2 is prescribed to be not more then about 45% of the thickness of an SiO2 film 3 to be produced on the layer 2. The wafer 1 is heated at 1,000 deg.C or more under an oxidizing atmosphere so that the SiO2 film 3 is produced on the layer 2 and this layer is all changed into an SiO2 film. As a result, point defects due to impurity atoms of supersaturated oxygen, carbon or the like and excessive atoms in an Si lattice are pushed out of a device making region. Therefore, this region 1a has no crystal lattice defects. After that, a source and a drain regions 4, 5 are produced in the region 1a by a conventional diffusion method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5029979A JPS55143039A (en) | 1979-04-25 | 1979-04-25 | Treating method of semiconductor wafer with heat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5029979A JPS55143039A (en) | 1979-04-25 | 1979-04-25 | Treating method of semiconductor wafer with heat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55143039A true JPS55143039A (en) | 1980-11-08 |
Family
ID=12855010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5029979A Pending JPS55143039A (en) | 1979-04-25 | 1979-04-25 | Treating method of semiconductor wafer with heat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55143039A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014138073A (en) * | 2013-01-16 | 2014-07-28 | Tokyo Electron Ltd | Method for forming silicon oxide film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5019363A (en) * | 1973-06-21 | 1975-02-28 |
-
1979
- 1979-04-25 JP JP5029979A patent/JPS55143039A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5019363A (en) * | 1973-06-21 | 1975-02-28 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014138073A (en) * | 2013-01-16 | 2014-07-28 | Tokyo Electron Ltd | Method for forming silicon oxide film |
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