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JPS5513954A - Protective film forming method for compound semiconductor - Google Patents

Protective film forming method for compound semiconductor

Info

Publication number
JPS5513954A
JPS5513954A JP8735578A JP8735578A JPS5513954A JP S5513954 A JPS5513954 A JP S5513954A JP 8735578 A JP8735578 A JP 8735578A JP 8735578 A JP8735578 A JP 8735578A JP S5513954 A JPS5513954 A JP S5513954A
Authority
JP
Japan
Prior art keywords
film
substrate
molecules
atoms
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8735578A
Other languages
Japanese (ja)
Inventor
Tatsuo Fuji
Hisatsune Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8735578A priority Critical patent/JPS5513954A/en
Publication of JPS5513954A publication Critical patent/JPS5513954A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain a very fine protective film that has acid proof and alkaline proof characteristics as well as low boundary level density, by forming a mixed oxide consisting of several element oxides, on a ompound semionductor substrate by means of the anode oxidation method, and then by covering a metal oxide film on the substrate and heat treating it.
CONSTITUTION: A thin film 2 of βGa2O3-As2O3 is formed on the surface of a GaAs single crystal substrate 1, and the film is covered by a thin HfO2 film 3. Then the substrate is treated with high temperature in a O2 atmosphere for diffusing O2 molecules into the films 3 and 2, thus combining them with Ga atoms 5 and As atoms 6. In this process, As2O3 molecules 7, that have a high vapour pressure, cannot pass through the film 3 because their molecular diameters are too large. Consequently, the film 2 does not become porous, thus the oxidation progresses more than the condition obtained by the anode oxidation process. Therefore, the film 2 becomes a very fine and high insulation film. It also has a quenching effect by heating it up, thus increasing resistance to chemicals.
COPYRIGHT: (C)1980,JPO&Japio
JP8735578A 1978-07-17 1978-07-17 Protective film forming method for compound semiconductor Pending JPS5513954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8735578A JPS5513954A (en) 1978-07-17 1978-07-17 Protective film forming method for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8735578A JPS5513954A (en) 1978-07-17 1978-07-17 Protective film forming method for compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5513954A true JPS5513954A (en) 1980-01-31

Family

ID=13912565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8735578A Pending JPS5513954A (en) 1978-07-17 1978-07-17 Protective film forming method for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5513954A (en)

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