[go: up one dir, main page]

JPS55133557A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55133557A
JPS55133557A JP3981279A JP3981279A JPS55133557A JP S55133557 A JPS55133557 A JP S55133557A JP 3981279 A JP3981279 A JP 3981279A JP 3981279 A JP3981279 A JP 3981279A JP S55133557 A JPS55133557 A JP S55133557A
Authority
JP
Japan
Prior art keywords
cap
package
plate
active region
secured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3981279A
Other languages
Japanese (ja)
Inventor
Kanji Otsuka
Michiaki Furukawa
Masao Sekihashi
Tamotsu Usami
Shinji Onishi
Takashi Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NITSUKAN DENSHI KK
Hitachi Ltd
Original Assignee
NITSUKAN DENSHI KK
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NITSUKAN DENSHI KK, Hitachi Ltd filed Critical NITSUKAN DENSHI KK
Priority to JP3981279A priority Critical patent/JPS55133557A/en
Publication of JPS55133557A publication Critical patent/JPS55133557A/en
Pending legal-status Critical Current

Links

Classifications

    • H10W72/30
    • H10W42/25
    • H10W70/682
    • H10W72/07551
    • H10W72/381
    • H10W72/50
    • H10W72/884
    • H10W90/756

Abstract

PURPOSE:To prevent the soft error of a semiconductor memory by disposing a semiconductor chip active region in a package nearer to the cap side from the plane of a sealed glass layer to largely reduce alpha ray dosage incident to the active region. CONSTITUTION:Insulating base and cap 1 mand 8 made of high alumina formation ceramic for forming a package are prepared. An alpha ray shield 7 made of high purity material plate is secured into the central recess of a cap 8. An intermediate plate 4 having low thermal expansion coefficient is disposed at the central recess of the base 1, and a silicon chip 5 is secured onto the plate 4. The cap 8 is then secured to the base 1, and a package is airtightly sealed. Since the plate 4 is interposed to approach the active region 5A of a semiconductor chip 5 nearer to the cap side from the plane of the sealed glass layers 2a, 2c, it can prevent the erroneous operation of a semiconductor memory owing to alpha rays irradiated from the sealing glasses 2a, 2c.
JP3981279A 1979-04-04 1979-04-04 Semiconductor device Pending JPS55133557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3981279A JPS55133557A (en) 1979-04-04 1979-04-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3981279A JPS55133557A (en) 1979-04-04 1979-04-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55133557A true JPS55133557A (en) 1980-10-17

Family

ID=12563372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3981279A Pending JPS55133557A (en) 1979-04-04 1979-04-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55133557A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140250A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5632416U (en) * 1979-08-21 1981-03-30
JPS59169955A (en) * 1983-03-14 1984-09-26 Mitsubishi Metal Corp Low-melting glass for sealing of semi-conductor device
JPS62281358A (en) * 1986-05-29 1987-12-07 Nec Kyushu Ltd Semiconductor device
JPS6356842A (en) * 1986-08-27 1988-03-11 Canon Inc Rotary head type recording or reproducing device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140250A (en) * 1979-04-18 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5632416U (en) * 1979-08-21 1981-03-30
JPS59169955A (en) * 1983-03-14 1984-09-26 Mitsubishi Metal Corp Low-melting glass for sealing of semi-conductor device
JPS62281358A (en) * 1986-05-29 1987-12-07 Nec Kyushu Ltd Semiconductor device
JPS6356842A (en) * 1986-08-27 1988-03-11 Canon Inc Rotary head type recording or reproducing device

Similar Documents

Publication Publication Date Title
JPS5588356A (en) Semiconductor device
JPS5745259A (en) Resin sealing type semiconductor device
JPS55133557A (en) Semiconductor device
JPS55163850A (en) Semiconductor device
JPS6477148A (en) Semiconductor storage device
JPS55163877A (en) Semiconductor integrated circuit device
JPS55128845A (en) Semiconductor device
JPS55163864A (en) Semiconductor device
JPS5610938A (en) Press-fit type semiconductor device
JPS55127035A (en) Semiconductor device
US3475663A (en) High voltage glass sealed semiconductor device
JPS55128850A (en) Semiconductor device
JPS54146986A (en) Package for semiconductor device
JPS57117261A (en) Package for semicondutor device
JPS5456364A (en) Semicondutor package
JPS6028139Y2 (en) semiconductor equipment
JPS55140253A (en) Semiconductor device
JPS5645053A (en) Semiconductor device
JPS5759364A (en) Semiconductor device
JPS55150257A (en) Semiconductor device
JPH06120460A (en) Solid-state image sensing device
JPS5633863A (en) Semiconductor device
JPS55143052A (en) Manufacture of semiconductor device
JPS55105352A (en) Semiconductor package structure
JPS52150971A (en) Semiconductor device for memory