JPS55117278A - Fabrication of semiconductor device - Google Patents
Fabrication of semiconductor deviceInfo
- Publication number
- JPS55117278A JPS55117278A JP2426779A JP2426779A JPS55117278A JP S55117278 A JPS55117278 A JP S55117278A JP 2426779 A JP2426779 A JP 2426779A JP 2426779 A JP2426779 A JP 2426779A JP S55117278 A JPS55117278 A JP S55117278A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- semiconductor device
- substrate
- gate
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent the gate withstand voltage of a semiconductor device from deteriorating by etching the gate insulating film with a reactive ion etching process. CONSTITUTION:A polysilicon 13 on a gate oxide film 12 of a silicon substrate 11 is etched with a resist mask 14 with known alkaline solution to form a gate electrode 15 thereon. Then, the film 12 etched with a reactive ion etching process employing CF4 gas. This process is difficult to etch the side surface, and since this process has more than ten times at the ratio of etching ratio of the silicon oxide film 12 to the substrate 11 different from the sputter etching process, it can prevent the substrate 11 from etching as undesired to form a pattern in high accuracy. Accordingly, the source and the drain can accurately be self-matched to set the channel length at accurate size to provide uniform electric characteristics in the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2426779A JPS55117278A (en) | 1979-03-02 | 1979-03-02 | Fabrication of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2426779A JPS55117278A (en) | 1979-03-02 | 1979-03-02 | Fabrication of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55117278A true JPS55117278A (en) | 1980-09-09 |
Family
ID=12133444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2426779A Pending JPS55117278A (en) | 1979-03-02 | 1979-03-02 | Fabrication of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55117278A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11871743B2 (en) | 2020-07-01 | 2024-01-16 | Barrierhome Co., Ltd. | Trap for use with vacuum cleaner |
-
1979
- 1979-03-02 JP JP2426779A patent/JPS55117278A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11871743B2 (en) | 2020-07-01 | 2024-01-16 | Barrierhome Co., Ltd. | Trap for use with vacuum cleaner |
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