JPS5498185A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5498185A JPS5498185A JP492778A JP492778A JPS5498185A JP S5498185 A JPS5498185 A JP S5498185A JP 492778 A JP492778 A JP 492778A JP 492778 A JP492778 A JP 492778A JP S5498185 A JPS5498185 A JP S5498185A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- thermal oxidation
- remaining
- photosensitive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000003064 anti-oxidating effect Effects 0.000 abstract 1
- YVZQFSNXOYLGMJ-UHFFFAOYSA-L chloro(2-hydroxyethyl)mercury;1-hexadecylpyridin-1-ium;bromide Chemical compound [Br-].OCC[Hg]Cl.CCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 YVZQFSNXOYLGMJ-UHFFFAOYSA-L 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To form minute patterns with high pattern accurary in the active area by forming a silicon dioxide film for the insulator separation by means of the thermal oxidation of substrate while oxides are remaining.
CONSTITUTION: Form oxidized film 2 of silicon dioxide by thermal oxidation etc. on the main surface of the single conductive type semiconductor substrate 1, form anti-oxidation insulation film 3 on 2, remove photosensitive resin from the inactive are and etch only insulaton film 3 by CF4 type plasma by using residual photosensitive resin 5 as the mask. Then, form p+ layer 6 on substrate 1 by means of ion injection, 100...200 KeV, of single conductive type impuirity such as oron, etc. through exposed oxidized film 2. Then, while residual oxdized film 2 is remaining, form silicon diocide film 8 for insulator separation by means of the thermal oxidation of substrate. With this invention, the pattern accuracy of active area is increased and minute patterns can be formed effectively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP492778A JPS5498185A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP492778A JPS5498185A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5498185A true JPS5498185A (en) | 1979-08-02 |
Family
ID=11597223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP492778A Pending JPS5498185A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5498185A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01253933A (en) * | 1988-04-04 | 1989-10-11 | Toshiba Corp | Manufacture of semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117585A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Manufacture for insulating gate type field effect transistor |
| JPS52134380A (en) * | 1976-05-06 | 1977-11-10 | Nippon Telegr & Teleph Corp <Ntt> | Production of mis type semiconductor circuits |
-
1978
- 1978-01-19 JP JP492778A patent/JPS5498185A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117585A (en) * | 1976-03-29 | 1977-10-03 | Mitsubishi Electric Corp | Manufacture for insulating gate type field effect transistor |
| JPS52134380A (en) * | 1976-05-06 | 1977-11-10 | Nippon Telegr & Teleph Corp <Ntt> | Production of mis type semiconductor circuits |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01253933A (en) * | 1988-04-04 | 1989-10-11 | Toshiba Corp | Manufacture of semiconductor device |
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