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JPS5495183A - Pressure contact-type semiconductor device - Google Patents

Pressure contact-type semiconductor device

Info

Publication number
JPS5495183A
JPS5495183A JP312578A JP312578A JPS5495183A JP S5495183 A JPS5495183 A JP S5495183A JP 312578 A JP312578 A JP 312578A JP 312578 A JP312578 A JP 312578A JP S5495183 A JPS5495183 A JP S5495183A
Authority
JP
Japan
Prior art keywords
layer
electrode
plate spring
pressure
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP312578A
Other languages
Japanese (ja)
Inventor
Mitsuo Odate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP312578A priority Critical patent/JPS5495183A/en
Publication of JPS5495183A publication Critical patent/JPS5495183A/en
Pending legal-status Critical Current

Links

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  • Die Bonding (AREA)

Abstract

PURPOSE: To reduce the distortion applied to an element when an electrode is brought into contact with the element by pressure, by interposing a powder metallic layer with a particle diameter below 2μm.
CONSTITUTION: A powder layer 7 with approximately 0.5 mm thickness is generated on the capacity bottom face of base electrode 2 and case 3. Element 1 is put on layer 7 so that electrode 13b may be at the top. Insulating ring 5 is inserted to leading-out electrode 4, and plate spring 6 is inserted. After that, the pressure over three times as large as the spring force of plate spring 6 is applied to solidify layer 7; and after the plate spring is fixed by a protrusion, a device is completed by welding and connection. In this structure, since powder layer 7 becomes a pressure buffering materials and the warp of element 1 is not reformed, element 1 is prevented form being affected by the distortion to a Si substrate and cracking. The ther-mal rmal resistance and forward voltage drop are reduced.
COPYRIGHT: (C)1979,JPO&Japio
JP312578A 1978-01-13 1978-01-13 Pressure contact-type semiconductor device Pending JPS5495183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP312578A JPS5495183A (en) 1978-01-13 1978-01-13 Pressure contact-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP312578A JPS5495183A (en) 1978-01-13 1978-01-13 Pressure contact-type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5495183A true JPS5495183A (en) 1979-07-27

Family

ID=11548630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP312578A Pending JPS5495183A (en) 1978-01-13 1978-01-13 Pressure contact-type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5495183A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476661A2 (en) * 1990-09-20 1992-03-25 Kabushiki Kaisha Toshiba Press-contact type semiconductor device
US6072240A (en) * 1998-10-16 2000-06-06 Denso Corporation Semiconductor chip package
US6380622B1 (en) 1998-11-09 2002-04-30 Denso Corporation Electric apparatus having a contact intermediary member and method for manufacturing the same
US6538308B1 (en) 1998-07-14 2003-03-25 Denso Corporation Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6946730B2 (en) 2001-04-25 2005-09-20 Denso Corporation Semiconductor device having heat conducting plate

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0476661A2 (en) * 1990-09-20 1992-03-25 Kabushiki Kaisha Toshiba Press-contact type semiconductor device
US5360985A (en) * 1990-09-20 1994-11-01 Kabushiki Kaisha Toshiba Press-contact type semiconductor device
US6538308B1 (en) 1998-07-14 2003-03-25 Denso Corporation Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element
US7009284B2 (en) 1998-07-14 2006-03-07 Denso Corporation Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element
US6072240A (en) * 1998-10-16 2000-06-06 Denso Corporation Semiconductor chip package
US6448645B1 (en) 1998-10-16 2002-09-10 Denso Corporation Semiconductor device
US6380622B1 (en) 1998-11-09 2002-04-30 Denso Corporation Electric apparatus having a contact intermediary member and method for manufacturing the same
DE19951752B4 (en) * 1998-11-09 2012-07-26 Denso Corporation Electric pressure contact device and method for its production
US6798062B2 (en) 1999-11-24 2004-09-28 Denso Corporation Semiconductor device having radiation structure
US6891265B2 (en) 1999-11-24 2005-05-10 Denso Corporation Semiconductor device having radiation structure
US6960825B2 (en) 1999-11-24 2005-11-01 Denso Corporation Semiconductor device having radiation structure
US6967404B2 (en) 1999-11-24 2005-11-22 Denso Corporation Semiconductor device having radiation structure
US6992383B2 (en) 1999-11-24 2006-01-31 Denso Corporation Semiconductor device having radiation structure
US6998707B2 (en) 1999-11-24 2006-02-14 Denso Corporation Semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6946730B2 (en) 2001-04-25 2005-09-20 Denso Corporation Semiconductor device having heat conducting plate
US6963133B2 (en) 2001-04-25 2005-11-08 Denso Corporation Semiconductor device and method for manufacturing semiconductor device

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