JPS5478095A - Semiconductor displacement converter - Google Patents
Semiconductor displacement converterInfo
- Publication number
- JPS5478095A JPS5478095A JP14498477A JP14498477A JPS5478095A JP S5478095 A JPS5478095 A JP S5478095A JP 14498477 A JP14498477 A JP 14498477A JP 14498477 A JP14498477 A JP 14498477A JP S5478095 A JPS5478095 A JP S5478095A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- substrate
- detector
- layer
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 5
- 229910052593 corundum Inorganic materials 0.000 abstract 5
- 229910000679 solder Inorganic materials 0.000 abstract 5
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE: To improve adhesive strength by interposing an Al2O3 layer and Cr layer sequentially from a Si-strain detector side between the detector and solder when fixing the detector and strain transfer part, transferring this displacement, in one by using alloy solder containing Au.
CONSTITUTION: On the surface of N-type Si substrate 11 whose surface bearing is (110), a P-type region is diffusion-formed for strain sensitive region 13, and to its reverse surface, funicle sense lever 17 with its surface plated with Au is fixed by using Au-Ge-Cu-system alloy solder 181. At this time, solder 181 and substrate 11 are not made in direct contact, Al2O3 film 151 is previously adhered to the reverse surface of substrate 11 by a DC sputtering method, and Cr layer 19 is interposed next to solder 181. As a result, since Al2O3 whose thermal expansivity approximates to those of Si and Cr is inserted between the both, internal stress focusing at interfaces between Si and Al2O3, and Al2O3 and Cr becomes small, so that no breakaway will occur.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14498477A JPS5478095A (en) | 1977-12-05 | 1977-12-05 | Semiconductor displacement converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14498477A JPS5478095A (en) | 1977-12-05 | 1977-12-05 | Semiconductor displacement converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5478095A true JPS5478095A (en) | 1979-06-21 |
Family
ID=15374766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14498477A Pending JPS5478095A (en) | 1977-12-05 | 1977-12-05 | Semiconductor displacement converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5478095A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5599005A (en) * | 1979-01-20 | 1980-07-28 | Heraeus Gmbh W C | Strain gauge and making method thereof |
| US20150323302A1 (en) * | 2014-05-06 | 2015-11-12 | National Sun Yat-Sen University | Flexible Strain Sensor, Method for Producing Same, and Measuring Device Including Same |
-
1977
- 1977-12-05 JP JP14498477A patent/JPS5478095A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5599005A (en) * | 1979-01-20 | 1980-07-28 | Heraeus Gmbh W C | Strain gauge and making method thereof |
| US20150323302A1 (en) * | 2014-05-06 | 2015-11-12 | National Sun Yat-Sen University | Flexible Strain Sensor, Method for Producing Same, and Measuring Device Including Same |
| TWI561217B (en) * | 2014-05-06 | 2016-12-11 | Univ Nat Sun Yat Sen | Flexible strain sensor, and measuring device with said flexible strain sensor |
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