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JPS5476071A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5476071A
JPS5476071A JP14359577A JP14359577A JPS5476071A JP S5476071 A JPS5476071 A JP S5476071A JP 14359577 A JP14359577 A JP 14359577A JP 14359577 A JP14359577 A JP 14359577A JP S5476071 A JPS5476071 A JP S5476071A
Authority
JP
Japan
Prior art keywords
film
anodic oxidation
selectively
oxide film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14359577A
Other languages
Japanese (ja)
Other versions
JPS5755288B2 (en
Inventor
Kohei Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14359577A priority Critical patent/JPS5476071A/en
Publication of JPS5476071A publication Critical patent/JPS5476071A/en
Publication of JPS5755288B2 publication Critical patent/JPS5755288B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make anodic oxidation selectively for the semiconductor without forming and removal of the mask film.
CONSTITUTION: The epitaxial layer 11 is laminated on the semiisolating substrate 10, selectively forming the source electrode 12 of Au.Ge, drain electrode 12', and gate electrode of gold. Next, the oxide film 15 is formed by coating only the electrodes 12, 12' with the Al evaporation film 14 and making anodic oxidation, and the oxide film 16 is formed also on the Al film. After that, the semiconductor device is finished with conventional technology. Thus, the oxide film of the desired pattern is formed by selectively using the metals which are easy or difficult for anodic oxidation, and the metals are used as the electrodes as they are.
COPYRIGHT: (C)1979,JPO&Japio
JP14359577A 1977-11-30 1977-11-30 Manufacture of semiconductor device Granted JPS5476071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14359577A JPS5476071A (en) 1977-11-30 1977-11-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14359577A JPS5476071A (en) 1977-11-30 1977-11-30 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5476071A true JPS5476071A (en) 1979-06-18
JPS5755288B2 JPS5755288B2 (en) 1982-11-24

Family

ID=15342369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14359577A Granted JPS5476071A (en) 1977-11-30 1977-11-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5476071A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01202163A (en) * 1988-02-04 1989-08-15 Matsushita Electric Ind Co Ltd High voltage power source

Also Published As

Publication number Publication date
JPS5755288B2 (en) 1982-11-24

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