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JPS542679A - Nonvoltile semiconductor memory device - Google Patents

Nonvoltile semiconductor memory device

Info

Publication number
JPS542679A
JPS542679A JP6821777A JP6821777A JPS542679A JP S542679 A JPS542679 A JP S542679A JP 6821777 A JP6821777 A JP 6821777A JP 6821777 A JP6821777 A JP 6821777A JP S542679 A JPS542679 A JP S542679A
Authority
JP
Japan
Prior art keywords
nonvoltile
memory device
semiconductor memory
action
menory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6821777A
Other languages
English (en)
Other versions
JPS5729859B2 (ja
Inventor
Mikio Kyomasu
Kanji Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6821777A priority Critical patent/JPS542679A/ja
Priority to SE7806147A priority patent/SE7806147L/xx
Priority to US05/910,950 priority patent/US4233616A/en
Priority to GB25231/78A priority patent/GB1600890A/en
Priority to NLAANVRAGE7806098,A priority patent/NL179774C/xx
Publication of JPS542679A publication Critical patent/JPS542679A/ja
Publication of JPS5729859B2 publication Critical patent/JPS5729859B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Non-Volatile Memory (AREA)
JP6821777A 1977-06-08 1977-06-08 Nonvoltile semiconductor memory device Granted JPS542679A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP6821777A JPS542679A (en) 1977-06-08 1977-06-08 Nonvoltile semiconductor memory device
SE7806147A SE7806147L (sv) 1977-06-08 1978-05-29 Programmerbart permanentminne av halvledartyp
US05/910,950 US4233616A (en) 1977-06-08 1978-05-30 Semiconductor non-volatile memory
GB25231/78A GB1600890A (en) 1977-06-08 1978-05-31 Semiconductor non-volatile memory
NLAANVRAGE7806098,A NL179774C (nl) 1977-06-08 1978-06-05 Werkwijze voor het vervaardigen van een halfgeleidergeheugeninrichting met een zwevende geheugenelektrode.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6821777A JPS542679A (en) 1977-06-08 1977-06-08 Nonvoltile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS542679A true JPS542679A (en) 1979-01-10
JPS5729859B2 JPS5729859B2 (ja) 1982-06-25

Family

ID=13367401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6821777A Granted JPS542679A (en) 1977-06-08 1977-06-08 Nonvoltile semiconductor memory device

Country Status (5)

Country Link
US (1) US4233616A (ja)
JP (1) JPS542679A (ja)
GB (1) GB1600890A (ja)
NL (1) NL179774C (ja)
SE (1) SE7806147L (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142007A (ja) * 1986-12-05 1988-06-14 Asahi Chem Ind Co Ltd 重合体の製造方法
JPS63179953A (ja) * 1987-01-21 1988-07-23 Asahi Chem Ind Co Ltd 重合体組成物の製造方法
JPS63264602A (ja) * 1986-12-01 1988-11-01 Asahi Chem Ind Co Ltd 重合体の製造法
JPH01135801A (ja) * 1987-11-24 1989-05-29 Asahi Chem Ind Co Ltd 変性重合体の製造法
JPH01182308A (ja) * 1988-01-14 1989-07-20 Asahi Chem Ind Co Ltd 重合体の取得法
JPH01185304A (ja) * 1988-01-19 1989-07-24 Asahi Chem Ind Co Ltd 変性重合体の取得方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3065360D1 (en) * 1979-06-18 1983-11-24 Fujitsu Ltd Semiconductor non-volatile memory device
JPS5754370A (en) * 1980-09-19 1982-03-31 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type transistor
US4395725A (en) * 1980-10-14 1983-07-26 Parekh Rajesh H Segmented channel field effect transistors
JPH0455570U (ja) * 1990-09-19 1992-05-13
JPH05297016A (ja) * 1992-04-22 1993-11-12 Japan Radio Co Ltd 風車型風向風速測定装置
US6031272A (en) 1994-11-16 2000-02-29 Matsushita Electric Industrial Co., Ltd. MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region
EP0814502A1 (en) * 1996-06-21 1997-12-29 Matsushita Electric Industrial Co., Ltd. Complementary semiconductor device and method for producing the same
KR100241524B1 (ko) * 1996-12-28 2000-02-01 김영환 플래쉬 메모리 셀
TWI257703B (en) * 2005-04-22 2006-07-01 Au Optronics Corp EEPROM and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838077A (ja) * 1971-09-16 1973-06-05

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4014036A (en) * 1971-07-06 1977-03-22 Ibm Corporation Single-electrode charge-coupled random access memory cell
US4057820A (en) * 1976-06-29 1977-11-08 Westinghouse Electric Corporation Dual gate MNOS transistor
US4054895A (en) * 1976-12-27 1977-10-18 Rca Corporation Silicon-on-sapphire mesa transistor having doped edges
US4142926A (en) * 1977-02-24 1979-03-06 Intel Corporation Self-aligning double polycrystalline silicon etching process
US4135929A (en) * 1977-09-09 1979-01-23 Eastman Kodak Company Photographic sulfonamido compounds and elements and processes using them

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838077A (ja) * 1971-09-16 1973-06-05

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63264602A (ja) * 1986-12-01 1988-11-01 Asahi Chem Ind Co Ltd 重合体の製造法
JPH0456041B2 (ja) * 1986-12-01 1992-09-07 Asahi Chemical Ind
JPS63142007A (ja) * 1986-12-05 1988-06-14 Asahi Chem Ind Co Ltd 重合体の製造方法
JPH0364521B2 (ja) * 1986-12-05 1991-10-07 Asahi Chemical Ind
JPS63179953A (ja) * 1987-01-21 1988-07-23 Asahi Chem Ind Co Ltd 重合体組成物の製造方法
JPH0468342B2 (ja) * 1987-01-21 1992-11-02 Asahi Chemical Ind
JPH01135801A (ja) * 1987-11-24 1989-05-29 Asahi Chem Ind Co Ltd 変性重合体の製造法
JPH0465081B2 (ja) * 1987-11-24 1992-10-19 Asahi Chemical Ind
JPH01182308A (ja) * 1988-01-14 1989-07-20 Asahi Chem Ind Co Ltd 重合体の取得法
JPH0465082B2 (ja) * 1988-01-14 1992-10-19 Asahi Chemical Ind
JPH01185304A (ja) * 1988-01-19 1989-07-24 Asahi Chem Ind Co Ltd 変性重合体の取得方法
JPH0465083B2 (ja) * 1988-01-19 1992-10-19 Asahi Chemical Ind

Also Published As

Publication number Publication date
GB1600890A (en) 1981-10-21
NL179774B (nl) 1986-06-02
NL7806098A (nl) 1978-12-12
NL179774C (nl) 1986-11-03
SE7806147L (sv) 1978-12-09
US4233616A (en) 1980-11-11
JPS5729859B2 (ja) 1982-06-25

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